IPD350N06LGBTMA1 N-Channel MOSFET from Infineon Technologies with 60V drain-source breakdown voltage and 29A continuous drain current. Features 35mOhm maximum on-resistance at 10V gate drive.
Mfr Part #:

IPD350N06LGBTMA1

Available from 4 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 60V drain-source breakdown voltage and 29A continuous drain current. Features 35mOhm maximum on-resistance at 10V gate drive.
✓ Total Stock: 16,770 pcs
$ Price Range: $0.27 - $1.19

IPD350N06LGBTMA1 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

IPD350N06LGBTMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD350N06LGBTMA1 Description

Short technical summary and product information.

The IPD350N06LGBTMA1 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power management applications. The device offers a drain-source breakdown voltage of 60V and a continuous drain current of 29A at case temperature. With a maximum on-resistance of 35mOhm at Vgs=10V and Id=29A, it provides low conduction losses. The gate charge is 13nC at Vgs=5V, enabling fast switching. Input capacitance is 800pF at Vds=30V. The MOSFET is surface mounted in a TO-252-3 (DPak) package, with a supplier device package of PG-TO252-3. It operates over a junction temperature range of -55°C to 175°C. Maximum power dissipation is 68W at case temperature. The device is RoHS3 compliant and has MSL Level 1. It is suitable for applications such as DC-DC converters, power supplies, and motor control.

IPD350N06LGBTMA1 Quick Information

Product Type: MOSFET
Canonical Name: Infineon Technologies IPD350N06LGBTMA1 N-Channel MOSFET, 60V, 29A, TO-252-3
Subcategory: N-Channel MOSFET

IPD350N06LGBTMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD350N06LGBTMA1 Estimated Pricing

Qty Low High
1+ $1.19 $1.19
10+ $0.75 $0.75
50+ $0.55 $0.55
100+ $0.49 $0.49
500+ $0.38 $0.38
2,500+ $0.31 $0.31
7,500+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD350N06LGBTMA1 Features

  • 60V drain-source breakdown voltage.
  • 29A continuous drain current rating.
  • 35mOhm maximum on-resistance.
  • Surface mount TO-252-3 package.
  • RoHS3 compliant.

IPD350N06LGBTMA1 Applications

  • Used in DC-DC converter circuits.
  • Suitable for power supply switching.
  • Ideal for motor control applications.
  • Applicable in battery management systems.

IPD350N06LGBTMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of this MOSFET?

The drain-source breakdown voltage is 60V.

What package does this MOSFET come in?

It comes in a TO-252-3 (DPak) surface mount package.

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

Is this component RoHS compliant?

Yes, it is RoHS3 compliant.

What is the maximum drain current?

The continuous drain current is 29A at case temperature.

What is the on-resistance?

The maximum on-resistance is 35mOhm at Id=29A and Vgs=10V.

What is the gate charge?

The maximum gate charge is 13nC at Vgs=5V.

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