| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,436 pcs
|
4436 pcs | On Request | 1 | On Request | On Request | 17+19+ | On Request | On Request | |
|
59 pcs
|
59 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| FET Type | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Technology |
The Infineon IPD33CN10NGATMA1 is a high-performance N-Channel MOSFET from the OptiMOS™ 2 series. It features a maximum drain-source voltage of 100V and a continuous drain current of 27A at 25°C.
With a low on-resistance of 33mOhm at 27A and 10V gate drive, this MOSFET is optimized for efficient power switching. It has a maximum power dissipation of 58W (Tc) and operates across a wide temperature range from -55°C to 175°C.
The device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface-mount package, making it suitable for various electronic designs. The gate charge is a maximum of 24nC at 10V, and input capacitance is 1570pF at 50V.
This MOSFET is ideal for applications requiring robust power handling and efficient switching characteristics. Its specifications make it a suitable component for power supplies, motor control, and other demanding electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The continuous drain current is 27A at 25°C.
The maximum on-resistance is 33mOhm at 27A and 10V gate drive.
The operating temperature range is -55°C to 175°C.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, it is ROHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.