IPD320N20N3GATMA1 N-Channel MOSFET, 200V drain-source breakdown voltage, 34A continuous drain current at 25°C. Low on-resistance of 32mΩ max, suitable for high-frequency switching applications.
Mfr Part #:

IPD320N20N3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 200V drain-source breakdown voltage, 34A continuous drain current at 25°C. Low on-resistance of 32mΩ max, suitable for high-frequency switching applications.
✓ Total Stock: 8,520 pcs
$ Price Range: $0.97 - $3.36

IPD320N20N3GATMA1 Available from 1 distributor

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✓ Non-Authorised
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IPD320N20N3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD320N20N3GATMA1 Description

Short technical summary and product information.

The IPD320N20N3GATMA1 is an OptiMOS 3 power MOSFET from Infineon Technologies, designed for high-efficiency power conversion. It features a drain-source breakdown voltage of 200 V (minimum) and a continuous drain current of 34 A at 25°C (24 A at 100°C). The maximum on-resistance is only 32 mΩ at Vgs=10V, ensuring low conduction losses. The device is capable of handling up to 136 W of power dissipation at 25°C case temperature.

 

Optimized for high-frequency switching, this MOSFET offers a typical total gate charge of 22 nC and a gate charge times on-resistance figure of merit (FOM) that enables efficient operation in synchronous rectification and DC-DC converter applications. It is avalanche rated with a single-pulse avalanche energy of 190 mJ and can withstand a reverse diode dv/dt of 10 kV/µs. The operating junction temperature range spans -55°C to 175°C.

 

The device is housed in a PG-TO252-3 surface-mount package (compatible with TO-252-3, DPak, and SC-63) and features Pb-free lead plating. It is RoHS3 compliant, making it suitable for environmentally conscious designs. Typical applications include high-frequency switching power supplies, synchronous rectification, load switches, and battery protection circuits.

IPD320N20N3GATMA1 Quick Information

Product Type: Power MOSFET
Canonical Name: Infineon IPD320N20N3G N-Channel MOSFET 200V 34A
Subcategory: N-Channel Power MOSFET

IPD320N20N3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IPD320N20N3GATMA1 Estimated Pricing

Qty Low High
1+ $3.36 $3.36
10+ $2.18 $2.18
50+ $1.68 $1.68
100+ $1.51 $1.51
500+ $1.23 $1.23
2,500+ $1.03 $1.03
7,500+ $0.97 $0.97

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD320N20N3GATMA1 Features

  • 200V drain-source breakdown voltage.
  • 34A continuous drain current at 25°C.
  • Low on-resistance of 32mΩ maximum.
  • 175°C maximum operating temperature.
  • RoHS3 and Pb-free compliant.

IPD320N20N3GATMA1 Applications

  • Ideal for high-frequency switching power supplies.
  • Used in synchronous rectification circuits.
  • Suitable for DC-DC converters in telecom.
  • Perfect for load switch and battery protection.

IPD320N20N3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

200 V minimum at Id=1mA, Vgs=0V.

What package options are available?

TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package PG-TO252-3, surface mount.

What is the operating temperature range?

-55°C to 175°C (junction and storage).

Is this component RoHS compliant?

Yes, RoHS3 compliant and Pb-free lead plating, verified from datasheet.

What is the typical gate threshold voltage?

2 V minimum, 3 V typical, 4 V maximum at Id=90µA, Vds=Vgs.

What is the continuous drain current at 100°C?

24 A at Tc=100°C.

What is the maximum power dissipation?

136 W at Tc=25°C.

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