Mfr Part #:

IPD30N10S3L34ATMA1

N-channel power MOSFET from Infineon, rated for 100V drain-source voltage and 30A continuous drain current. Housed in a surface-mount TO-252-3 (DPak) package.

✓ Total Stock: 10,000 pcs

$ Price Range: $0.59 - $2.12

IPD30N10S3L34ATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	10,000 pcs On Request	10000 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

IPD30N10S3L34ATMA1 Description

Short technical summary and product information.

The IPD30N10S3L34ATMA1 from Infineon Technologies is a N-channel enhancement mode power MOSFET featuring a drain-source voltage of 100V and a continuous drain current of 30A at Tc=25°C. It is part of the OptiMOS-T family and is AEC-Q101 qualified for automotive applications. The device offers low on-resistance: typical 25.8mΩ and maximum 31mΩ at VGS=10V, ID=30A. Gate charge is 24nC typ (31nC max) at VGS=10V, enabling efficient switching. The MOSFET is capable of 57W power dissipation at Tc=25°C and operates over a junction temperature range of -55°C to +175°C. It is packaged in the PG-TO252-3-11 (DPak) surface-mount package and is RoHS compliant with MSL1 moisture sensitivity level. The part is 100% avalanche tested with single pulse avalanche energy of 138mJ.

IPD30N10S3L34ATMA1 Quick Information

Product Type: Power MOSFET

Series: OptiMOS-T

Canonical Name: Infineon Technologies IPD30N10S3L34ATMA1 N-Channel Power MOSFET

Subcategory: Single MOSFET

IPD30N10S3L34ATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD30N10S3L34ATMA1 Estimated Pricing

Qty	Low	High
1+	$2.12	$2.12
10+	$1.35	$1.35
100+	$0.91	$0.91
500+	$0.72	$0.72
1,000+	$0.66	$0.66
2,500+	$0.60	$0.60
5,000+	$0.59	$0.59

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD30N10S3L34ATMA1 Features

N-channel enhancement mode power MOSFET.
100V drain-source breakdown voltage.
30A continuous drain current at 25°C.
Low on-resistance: 31 mΩ max at 10V.
AEC-Q101 qualified for automotive use.

IPD30N10S3L34ATMA1 Applications

Suitable for DC-DC converters and power supplies.
Used in automotive engine control units.
Ideal for motor control and load switching.
Applicable in battery management systems.

IPD30N10S3L34ATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IPD30N10S3L34ATMA1?

The drain-source voltage (VDS) is 100V.

What package type is this MOSFET available in?

It comes in a PG-TO252-3-11 (DPak, TO-252-3) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +175°C.

Is this component RoHS compliant?

Yes, it is RoHS3 compliant as verified by the datasheet.

Is the IPD30N10S3L34ATMA1 AEC-Q101 qualified?

Yes, it is AEC-Q101 qualified for automotive applications.

What is the typical on-resistance?

Typical on-resistance is 25.8mΩ at VGS=10V, ID=30A; maximum 31.0mΩ.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
AEC Qualified	Yes
Automotive Grade	Yes
Current	30 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC (typ), 31 nC (max)
Input Capacitance (Ciss) (Max) @ Vds	1520 pF (typ), 1976 pF (max)
Lead Style	Gull Wing
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	57 W
Rds On (Max) @ Id, Vgs	25.8 mΩ (typ) / 31.0 mΩ (max)
Reverse Recovery Time	72 ns
Supplier Device Package	PG-TO222-3-11
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	1.2 V (min), 1.7 V (typ), 2.4 V (max)