| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,716 pcs
|
3716 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon Technologies IPD30N10S3L-34 is an N-channel enhancement mode power MOSFET. It is automotive AEC Q101 qualified and rated for a continuous drain current of 30A at 25°C with a VGS of 10V, and 20A at 100°C. The device features a drain-source breakdown voltage of 100V and a low on-state resistance, with a typical RDS(on) of 25.8 mΩ at VGS=10V and ID=30A.
This MOSFET operates at temperatures up to 175°C and has a power dissipation of 57W at 25°C. It is packaged in a PG-TO252-3-11 surface-mount package. The device also includes a reverse diode with a continuous forward current of 30A and a typical forward voltage of 1V.
Key electrical characteristics include input capacitance of 1520 pF, output capacitance of 380 pF, and reverse transfer capacitance of 45 pF. Switching characteristics show a typical turn-on delay of 6 ns, rise time of 4 ns, turn-off delay of 18 ns, and fall time of 3 ns.
The IPD30N10S3L-34 is RoHS compliant and has an MSL rating of 1. It is suitable for various automotive power applications requiring reliable and efficient switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The typical gate threshold voltage is 1.7V.
The typical drain-source on-state resistance at VGS=10V and ID=30A is 25.8 mΩ.
The continuous drain current at 25°C with VGS=10V is 30A.
The operating and storage temperature range is -55°C to +175°C.
This MOSFET is in the PG-TO252-3-11 package.
The RoHS status is RoHS3 Compliant.