Mfr Part #:

IPD30N10S3L-34

Mfr Name: Infineon

The Infineon IPD30N10S3L-34 is an N-channel enhancement mode MOSFET designed for automotive applications. It offers a 100V breakdown voltage and 30A continuous drain current.

✓ Total Stock: 16,859 pcs

$ Price Range: $2.40

IPD30N10S3L-34 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	12,898 pcs On Request	12898 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	3,421 pcs On Request	3421 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	540 pcs On Request	540 pcs	On Request	1	On Request	On Request	23+	On Request	On Request

IPD30N10S3L-34 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Mounting Type	Surface Mount
Operating Temperature	-55 °C / 175 °C
Power Dissipation	57
Reverse Recovery Time	72
SVHC Present	Not Present

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IPD30N10S3L-34 Description

Short technical summary and product information.

The Infineon IPD30N10S3L-34 is an N-channel enhancement mode power MOSFET from the OptiMOS™-T family. It is automotive AEC Q101 qualified and rated for a maximum drain-source voltage of 100V.

Key electrical characteristics include a typical drain-source on-state resistance as low as 25.8 mΩ at VGS=10V and ID=30A. The device features a continuous drain current of 30A at 25°C case temperature and 20A at 100°C case temperature.

With an operating temperature range of -55°C to +175°C and MSL1 rating, this MOSFET is suitable for demanding environments. It is supplied in a PG-TO252-3-11 package, designed for surface mounting.

IPD30N10S3L-34 Quick Information

Product Type: MOSFET

Canonical Name: IPD30N10S3L-34 N-channel MOSFET

Subcategory: N-Channel Power MOSFET

IPD30N10S3L-34 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD30N10S3L-34 Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD30N10S3L-34 Features

Automotive AEC Q101 qualified.
N-channel enhancement mode MOSFET.
100V drain-source breakdown voltage.
30A continuous drain current.
Low RDS(on) for efficient power transfer.

IPD30N10S3L-34 Applications

Suitable for automotive power systems.
Ideal for high-current switching tasks.
Used in engine control modules.
Applicable in power management circuits.

IPD30N10S3L-34 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the IPD30N10S3L-34?

The drain-source breakdown voltage is 100V minimum at VGS=0V and ID=1mA.

What is the package type of the IPD30N10S3L-34?

The package is PG-TO252-3-11 (DPAK) surface mount.

What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

What is the continuous drain current rating?

The continuous drain current is 30A at 25°C case temperature with VGS=10V.

What is the typical RDS(on) at VGS=10V?

The typical RDS(on) is 25.8mΩ, with a maximum of 31mΩ at VGS=10V, ID=30A.

What is the gate threshold voltage of this MOSFET?

The gate threshold voltage is 1.2V minimum, 1.7V typical, and 2.4V maximum at VDS=VGS, ID=29µA.

What is the total gate charge?

The total gate charge is 24nC typical, 31nC maximum at VDD=80V, ID=30A, VGS=0 to 10V.