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IPD30N08S2L21ATMA1 Infineon Technologies IPD30N08S2L-21 N-Channel MOSFET. 75V drain-source breakdown voltage, 30A continuous drain current, 20.5mΩ maximum on-resistance at 10V gate drive.
Mfr Part #:

IPD30N08S2L21ATMA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon Technologies IPD30N08S2L-21 N-Channel MOSFET. 75V drain-source breakdown voltage, 30A continuous drain current, 20.5mΩ maximum on-resistance at 10V gate drive.
✓ Total Stock: 14,235 pcs
$ Price Range: $0.69 - $2.57

IPD30N08S2L21ATMA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
9,235 pcs
On Request
9235 pcs On Request 1 On Request On Request 22+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request 21+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPD30N08S2L21ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IPD30N08S2L21ATMA1 Description

Short technical summary and product information.

The IPD30N08S2L21ATMA1 is an N-Channel enhancement mode power MOSFET from Infineon Technologies' OptiMOS family. It features a drain-source breakdown voltage of 75V and a continuous drain current rating of 30A at 25°C case temperature with 10V gate drive. The device offers ultra-low on-resistance with a maximum of 20.5mΩ at Vgs=10V and Id=25A, and 26mΩ at Vgs=4.5V. It is 100% avalanche tested with a single pulse avalanche energy rating of 240mJ. The gate threshold voltage ranges from 1.2V to 2.0V, enabling logic-level gate drive. The MOSFET is housed in a PG-TO252-3-11 surface mount package (DPak/TO-252) and is RoHS3 compliant with MSL1 moisture sensitivity. It operates over a junction temperature range of -55°C to 175°C and delivers a maximum power dissipation of 136W. The device is AEC Q101 qualified for automotive applications.

IPD30N08S2L21ATMA1 Quick Information

Product Type: Single N-Channel MOSFET
Series: IPD30N08S2L-21
Canonical Name: Infineon Technologies IPD30N08S2L-21 OptiMOS Power-Transistor
Subcategory: Power MOSFET

IPD30N08S2L21ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL1 - Unlimited
REACH Status: REACH Unaffected

IPD30N08S2L21ATMA1 Estimated Pricing

Qty Low High
1+ $2.57 $2.57
10+ $1.49 $1.49
100+ $1.08 $1.08
500+ $0.90 $0.90
1,000+ $0.84 $0.84
2,500+ $0.75 $0.75
5,000+ $0.69 $0.69
10,000+ $0.69 $0.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD30N08S2L21ATMA1 Features

  • 75V drain-source breakdown voltage.
  • 30A continuous drain current rating.
  • Ultra low 20.5mΩ on-resistance at 10V.
  • Logic-level gate threshold from 1.2V to 2.0V.
  • AEC Q101 qualified for automotive use.

IPD30N08S2L21ATMA1 Applications

  • Automotive engine control modules.
  • DC-DC converters and power supplies.
  • Motor drive and solenoid control.
  • Load switching and power management.
  • Battery protection and charging circuits.

IPD30N08S2L21ATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPD30N08S2L21ATMA1?

The drain-source breakdown voltage is 75V minimum.

What is the continuous drain current rating?

30A at Tc=25°C with Vgs=10V.

What is the maximum on-resistance?

20.5mΩ at Vgs=10V, Id=25A, and 26mΩ at Vgs=4.5V, Id=25A.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is the IPD30N08S2L21ATMA1 available in?

PG-TO252-3-11 surface mount package (TO-252-3, DPak).

Is the device RoHS compliant?

Yes, the datasheet indicates a green (lead-free) package, and the part is marked as RoHS3 compliant.

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