IPD30N08S2L-21 The Infineon IPD30N08S2L-21 is an N-channel OptiMOS® power MOSFET. It offers a 75V drain-source breakdown voltage and a continuous drain current of 30A.
Mfr Part #:

IPD30N08S2L-21

Available from 4 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD30N08S2L-21 is an N-channel OptiMOS® power MOSFET. It offers a 75V drain-source breakdown voltage and a continuous drain current of 30A.
✓ Total Stock: 12,014 pcs
$ Price Range: $2.93

IPD30N08S2L-21 Available from 4 distributors

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IPD30N08S2L-21 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation
Reverse Recovery Time

IPD30N08S2L-21 Description

Short technical summary and product information.

The Infineon IPD30N08S2L-21 is an N-channel logic-level enhancement mode power MOSFET from the OptiMOS® family. It is designed for high-performance applications requiring low on-state resistance and efficient switching.

 

Key electrical specifications include a drain-source breakdown voltage of 75V and a continuous drain current of 30A at 25°C case temperature. The on-state resistance (Rds(on)) is as low as 20.5 mΩ at VGS=10V and 26 mΩ at VGS=4.5V, both with a drain current of 25A. The device features a gate threshold voltage of 1.6V typical and operates over a wide temperature range from -55°C to +175°C.

 

This MOSFET is packaged in a PG-TO252-3-11 surface-mount package. It is AEC Q101 qualified and features 100% avalanche tested, making it suitable for demanding automotive and industrial applications. The green package is lead-free and supports reflow soldering up to 260°C.

 

Additional characteristics include low input capacitance (1650pF), output capacitance (400pF), and reverse transfer capacitance (190pF). Dynamic characteristics such as turn-on delay time (9ns), rise time (30ns), turn-off delay time (44ns), and fall time (11ns) are also specified.

IPD30N08S2L-21 Quick Information

Product Type: MOSFET
Series: OptiMOS 2
Canonical Name: IPD30N08S2L-21 OptiMOS® Power-Transistor
Subcategory: N-channel Logic Level

IPD30N08S2L-21 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Green package (lead free)

IPD30N08S2L-21 Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD30N08S2L-21 Features

  • N-channel logic level enhancement mode MOSFET.
  • 75V drain-source breakdown voltage.
  • 30A continuous drain current.
  • Low Rds(on) down to 20.5 mΩ.
  • AEC Q101 qualified for automotive use.

IPD30N08S2L-21 Applications

  • Automotive valve control.
  • Solenoid control applications.
  • Power switching circuits.
  • DC-DC converters.
  • Load switching.

IPD30N08S2L-21 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 75V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 1.6V.

What is the maximum continuous drain current?

The maximum continuous drain current is 30A.

What is the maximum on-state resistance?

The maximum on-state resistance is 20.5 mΩ at VGS=10V and 25A.

What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

What is the package type?

The package type is PG-TO252-3-11.

Is this product RoHS compliant?

The RoHS status is RoHS3 Compliant.

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