| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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115 pcs
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115 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPD30N08S2-22 is an N-channel enhancement mode Power MOSFET from the OptiMOS® family. It is qualified for automotive applications according to AEC Q101 standards.
Key electrical characteristics include a drain-source breakdown voltage of 75V and a maximum continuous drain current of 30A at 25°C case temperature. The device features an ultra-low Rds(on) of 21.5 mΩ maximum at VGS=10V and ID=50A, contributing to high efficiency.
This MOSFET operates over a temperature range of -55°C to +175°C and has a maximum power dissipation of 136W at 25°C. It is supplied in a PG-TO252-3-11 package suitable for surface mounting.
Additional features include 100% avalanche tested and a green, lead-free package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 75V.
The maximum continuous drain current is 30A.
The typical gate threshold voltage is 3.1V.
The maximum Rds(on) is 21.5 mΩ at VGS=10V and ID=50A.
The operating temperature range is -55°C to +175°C.
It is supplied in the PG-TO252-3-11 package.
Yes, it is Automotive AEC Q101 qualified.