IPD30N06S4L23ATMA2 N-Channel power MOSFET with 60V drain-source voltage and 30A continuous drain current. Features low on-resistance of 23mOhm at 10V gate drive.
Mfr Part #:

IPD30N06S4L23ATMA2

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET with 60V drain-source voltage and 30A continuous drain current. Features low on-resistance of 23mOhm at 10V gate drive.
✓ Total Stock: 13,520 pcs
$ Price Range: $0.34 - $1.46

IPD30N06S4L23ATMA2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
11,020 pcs
11020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 21+ On Request On Request

IPD30N06S4L23ATMA2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD30N06S4L23ATMA2 Description

Short technical summary and product information.

Th IPD30N06S4L23ATMA2 from Infineon Technologies is an N-Channel enhancement mode power MOSFET built on the OptiMOS-T2 technology. It is designed for high efficiency power switching applications and is AEC Q101 qualified for automotive use.

 

Electrical characteristics include a drain-source breakdown voltage of 60V and continuous drain current of 30A at 25°C. The drain-source on-state resistance is typically 18mOhm and maximum 23mOhm at Vgs=10V and Id=30A. Gate threshold voltage ranges from 1.2V to 2.2V, enabling logic-level drive. Switching performance is enhanced with typical turn-on and turn-off delays of 4ns and 15ns respectively, and rise/fall times of 1ns and 3ns.

 

The device is offered in a surface-mount TO-252-3 (DPak/SC-63) package with supplier package PG-TO252-3-11. Thermal characteristics show a junction-to-case thermal resistance of 4.2K/W and power dissipation up to 36W at 25°C case temperature. The operating junction temperature range is -55°C to 175°C.

 

Reliability and environmental compliance include RoHS3 certification, MSL1 rating for unlimited floor life at 260°C peak reflow, and 100% avalache tested for ruggedness. This part is suitable for demanding environments including automotive electronics, DC-DC converters, and motor control systems.

IPD30N06S4L23ATMA2 Quick Information

Product Type: Power MOSFET
Series: OptiMOS-T2
Canonical Name: Infineon Technologies IPD30N06S4L23ATMA2 N-Channel MOSFET
Subcategory: Single MOSFET

IPD30N06S4L23ATMA2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL1 Unlimited
REACH Status: REACH Unaffected

IPD30N06S4L23ATMA2 Estimated Pricing

Qty Low High
1+ $1.46 $1.46
10+ $0.92 $0.92
50+ $0.69 $0.69
100+ $0.61 $0.61
500+ $0.48 $0.48
2,500+ $0.39 $0.39
7,500+ $0.34 $0.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD30N06S4L23ATMA2 Features

  • N-Channel enhancement mode power MOSFET.
  • Low on-resistance of 23 mOhm at 10V gate drive.
  • Rated for 60V drain-source voltage and 30A continuous current.
  • AEC Q101 qualified for automotive applications.
  • 175°C maximum junction temperature.

IPD30N06S4L23ATMA2 Applications

  • Suitable for automotive power switching applications.
  • Used in DC-DC converters and voltage regulators.
  • Ideal for load switch and motor drive circuits.
  • Applicable in high-temperature environments up to 175°C.

IPD30N06S4L23ATMA2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V minimum breakdown voltage.

What package does the IPD30N06S4L23ATMA2 come in?

TO-252-3 (DPak, SC-63) surface mount package.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the IPD30N06S4L23ATMA2 RoHS compliant?

Yes, RoHS3 compliant per datasheet.

What is the maximum continuous drain current?

30A at Tc=25°C (Vgs=10V) and 21A at Tc=100°C.

What is the typical on-resistance?

Maximum 23 mOhm at Vgs=10V, Id=30A.

Is this MOSFET qualified for automotive applications?

Yes, AEC Q101 qualified as per datasheet.

Home
Account

Categories