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IPD30N06S4L-23 The Infineon IPD30N06S4L-23 is an N-channel OptiMOS®-T2 Power-Transistor. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 30A.
Mfr Part #:

IPD30N06S4L-23

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD30N06S4L-23 is an N-channel OptiMOS®-T2 Power-Transistor. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 30A.
✓ Total Stock: 2,051 pcs
$ Price Range: $0.99

IPD30N06S4L-23 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,651 pcs
On Request
1651 pcs On Request 1 On Request On Request On Request On Request On Request
Risen Electronics ✓
Non-Authorised Inventory information
400 pcs
On Request
400 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPD30N06S4L-23 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Lead Spacing
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Reverse Recovery Time
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IPD30N06S4L-23 Description

Short technical summary and product information.

The Infineon IPD30N06S4L-23 is an N-channel enhancement mode power MOSFET from the OptiMOS®-T2 family. It is AEC Q101 qualified and designed for high-performance applications.

 

Key electrical characteristics include a drain-source breakdown voltage of 60V and a low on-state resistance (RDS(on)) of 23 mΩ maximum at VGS=10V and ID=30A. The continuous drain current is rated at 30A at 25°C case temperature and 21A at 100°C case temperature.

 

This MOSFET operates over a wide temperature range from -55°C to +175°C. It is supplied in a PG-TO252-3-11 package, suitable for surface mounting.

 

Features such as 100% avalanche tested and MSL1 rating up to 260°C peak reflow make it suitable for demanding automotive and industrial applications.

IPD30N06S4L-23 Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Infineon IPD30N06S4L-23 N-channel OptiMOS®-T2 Power-Transistor
Subcategory: N-channel Power MOSFET

IPD30N06S4L-23 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD30N06S4L-23 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD30N06S4L-23 Features

  • N-channel enhancement mode MOSFET.
  • 60V drain-source breakdown voltage.
  • Low 23mOhm max RDS(on).
  • AEC Q101 qualified.
  • 175°C maximum operating temperature.

IPD30N06S4L-23 Applications

  • Suitable for automotive applications.
  • Ideal for power switching circuits.
  • Used in high-efficiency designs.
  • Robust for demanding environments.

IPD30N06S4L-23 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 60V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 1.7V.

What is the maximum drain-source on-state resistance?

The maximum drain-source on-state resistance is 23 mΩ at VGS=10V, ID=30A.

What is the continuous drain current at 25°C?

The continuous drain current is 30A at 25°C case temperature.

What is the maximum operating temperature?

The maximum operating temperature is 175°C.

What package is this MOSFET in?

This MOSFET is in a PG-TO252-3-11 package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

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