IPD30N06S2L23ATMA3 N-Channel Logic-Level MOSFET from Infineon Technologies, rated 55V drain-source voltage and 30A continuous drain current. Features low on-resistance of 23mΩ max at 10V gate drive, housed in a TO-252-3 (DPak) package.
Mfr Part #:

IPD30N06S2L23ATMA3

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel Logic-Level MOSFET from Infineon Technologies, rated 55V drain-source voltage and 30A continuous drain current. Features low on-resistance of 23mΩ max at 10V gate drive, housed in a TO-252-3 (DPak) package.
✓ Total Stock: 1,477 pcs
$ Price Range: $0.47 - $1.86

IPD30N06S2L23ATMA3 Available from 1 distributor

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✓ Non-Authorised
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IPD30N06S2L23ATMA3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD30N06S2L23ATMA3 Description

Short technical summary and product information.

The IPD30N06S2L23ATMA3 is an N-channel logic-level MOSFET from Infineon Technologies' OptiMOS family. It is rated for a drain-source voltage of 55V and a continuous drain current of 30A at Tc=25°C with Vgs=10V, making it suitable for high-current switching applications.

 

The device features a maximum on-resistance of 23mΩ at Vgs=10V and Id=22A, and 30mΩ at Vgs=4.5V, enabling efficient power handling. It has a total gate charge of 42nC (max) and input capacitance of 1091pF, contributing to fast switching performance. The MOSFET is avalanche rated with a single pulse avalanche energy of 150mJ.

 

Packaged in a TO-252-3 (DPak) surface-mount package, the device offers a maximum power dissipation of 100W at Tc=25°C. It operates over a junction temperature range of -55°C to 175°C and has a thermal resistance of 1.5 K/W (junction-to-case).

 

This MOSFET is automotive AEC Q101 qualified and comes in a green (lead-free) package. It is MSL1 rated up to 260°C peak reflow, ensuring compatibility with standard soldering processes.

IPD30N06S2L23ATMA3 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS
Canonical Name: N-Channel Logic-Level MOSFET, 55V, 30A, TO-252-3
Subcategory: Single MOSFET

IPD30N06S2L23ATMA3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited) - 260°C Peak Reflow
REACH Status: REACH Unaffected
Lead Free: Yes

IPD30N06S2L23ATMA3 Estimated Pricing

Qty Low High
1+ $1.86 $1.86
10+ $1.09 $1.09
100+ $0.80 $0.80
500+ $0.69 $0.69
1,000+ $0.62 $0.62
2,500+ $0.51 $0.51
5,000+ $0.49 $0.49
10,000+ $0.47 $0.47
25,000+ $0.47 $0.47

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD30N06S2L23ATMA3 Features

  • Logic-level gate drive for 4.5V and 10V.
  • Rated for 55V drain-source voltage.
  • Continuous drain current up to 30A.
  • Low on-resistance of 23mΩ max.
  • Automotive AEC Q101 qualified.

IPD30N06S2L23ATMA3 Applications

  • Automotive AEC Q101 qualified for reliability.
  • Suitable for high-current power switching.
  • For use in automotive power systems.

IPD30N06S2L23ATMA3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPD30N06S2L23ATMA3?

55V.

What is the package type of this MOSFET?

TO-252-3 (DPak) surface mount package.

What is the operating temperature range?

-55°C to 175°C (junction).

Is this MOSFET RoHS compliant?

Yes, listed as RoHS3 compliant and is lead-free (green package) per datasheet.

What is the maximum continuous drain current?

30A at Tc=25°C with Vgs=10V.

What is the on-resistance of this MOSFET?

Maximum 23mΩ at Vgs=10V, Id=22A.

Is this device qualified for automotive applications?

Yes, it is AEC Q101 qualified.

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