IPD30N06S2L13ATMA4 IPD30N06S2L13ATMA4 is a 55V, 30A N-Channel logic-level power MOSFET from Infineon Technologies. It features a low 13 mΩ maximum on-resistance and comes in a TO-252-3 (DPak) surface-mount package.
Mfr Part #:

IPD30N06S2L13ATMA4

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IPD30N06S2L13ATMA4 is a 55V, 30A N-Channel logic-level power MOSFET from Infineon Technologies. It features a low 13 mΩ maximum on-resistance and comes in a TO-252-3 (DPak) surface-mount package.
✓ Total Stock: 977 pcs
$ Price Range: $0.62 - $2.34

IPD30N06S2L13ATMA4 Available from 1 distributor

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IPD30N06S2L13ATMA4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IPD30N06S2L13ATMA4 Description

Short technical summary and product information.

The IPD30N06S2L13ATMA4 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET built on the OptiMOS process. It is rated for a maximum drain-source voltage of 55 V and a continuous drain current of 30 A at Tc = 25°C with Vgs = 10 V. The maximum on-resistance is 13 mΩ at Vgs = 10 V and 17 mΩ at Vgs = 4.5 V, making it suited to low-voltage power switching applications.

 

The device is qualified to AEC Q101 for automotive applications and supports operating junction temperatures up to 175°C. It is offered in a TO-252-3 (DPak) surface-mount package with supplier package code PG-TO252-3-11. Thermal resistance from junction to case is specified at 1.1 K/W, and maximum power dissipation is 136 W at Tc = 25°C.

 

Key electrical characteristics include a gate threshold voltage range of 1.2 V to 2 V, input capacitance of 1800 pF, and total gate charge of 69 nC, enabling efficient gate drive design. The package is lead-free and listed as RoHS3 compliant.

IPD30N06S2L13ATMA4 Quick Information

Product Type: MOSFET
Series: IPD30N06S2L-13
Canonical Name: N-Channel Logic-Level Power MOSFET, 55V, 30A, TO-252-3
Subcategory: Single MOSFET

IPD30N06S2L13ATMA4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free (Green Package)

IPD30N06S2L13ATMA4 Estimated Pricing

Qty Low High
1+ $2.34 $2.34
10+ $1.26 $1.26
100+ $0.93 $0.93
500+ $0.79 $0.79
1,000+ $0.74 $0.74
2,500+ $0.68 $0.68
5,000+ $0.63 $0.63
10,000+ $0.62 $0.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD30N06S2L13ATMA4 Features

  • Rated for 55V drain-source voltage.
  • Supports 30A continuous drain current.
  • Maximum on-resistance of 13 mΩ.
  • AEC Q101 qualified for automotive applications.
  • Available in surface-mount TO-252-3 package.

IPD30N06S2L13ATMA4 Applications

  • Ideal for automotive power switching circuits.
  • Designed for low-voltage power distribution systems.
  • Suitable for high-efficiency DC-DC converters.

IPD30N06S2L13ATMA4 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDS) is 55V.

What is the package type for this MOSFET?

It is available in a TO-252-3 (DPak) surface-mount package, with supplier package code PG-TO252-3-11.

What is the operating temperature range?

The junction operating and storage temperature range is -55°C to 175°C.

Is this part RoHS compliant?

The datasheet states a lead-free green package, and the existing database lists it as RoHS3 compliant.

What is the maximum continuous drain current?

The continuous drain current is 30A at Tc=25°C with Vgs=10V.

What is the on-resistance at Vgs=10V?

The maximum RDS(on) is 13mΩ at Vgs=10V and Id=30A, with a typical value of 10.6mΩ.

Is this MOSFET qualified for automotive applications?

Yes, it is AEC Q101 qualified for automotive applications per the datasheet.

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