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IPD30N06S2L-13 N-Channel MOSFET with 55V drain-source breakdown voltage, 30A continuous drain current, and low on-resistance of 13mOhm. Housed in a surface-mount TO252-3 package.
Mfr Part #:

IPD30N06S2L-13

Available from 3 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 55V drain-source breakdown voltage, 30A continuous drain current, and low on-resistance of 13mOhm. Housed in a surface-mount TO252-3 package.
✓ Total Stock: 4,917 pcs

IPD30N06S2L-13 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
3,314 pcs
On Request
3314 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,235 pcs
On Request
1235 pcs On Request 1 On Request On Request 1323+ On Request On Request
Rayichip ✓
Non-Authorised Inventory information
368 pcs
On Request
368 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPD30N06S2L-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IPD30N06S2L-13 Description

Short technical summary and product information.

The IPD30N06S2L-13 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS family. It features a drain-source voltage rating of 55V and a continuous drain current of 30A at 25°C, with pulsed current capability up to 200A. The device offers low on-state resistance, typically 10.6mOhm at Vgs=10V and 13.1mOhm at Vgs=4.5V, ensuring high efficiency in power conversion applications. The gate threshold voltage ranges from 1.2V to 2.0V, enabling logic-level drive. Dynamic characteristics include input capacitance of 1800pF and total gate charge of 54nC typical, supporting fast switching. The MOSFET is avalanche rated at 240mJ single pulse. Packaged in the TO-252-3 (DPak) surface mount package, it is designed for automated assembly. The device is RoHS compliant with a green lead-free package and is MSL1 up to 260°C peak reflow. It is also AEC Q101 qualified for automotive applications.

IPD30N06S2L-13 Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: MOSFET N-CH 55V 30A TO252-3
Subcategory: Single MOSFET

IPD30N06S2L-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL1 up to 260°C peak reflow
REACH Status: REACH Unaffected
Lead Free: Lead Free (Green Package)

IPD30N06S2L-13 Features

  • 55V drain-source breakdown voltage rated.
  • 30A continuous drain current at 25°C.
  • Low on-resistance: 13mOhm max at 10V.
  • Logic-level gate threshold (1.2V min).
  • AEC Q101 automotive qualified.

IPD30N06S2L-13 Applications

  • Ideal for DC-DC converter circuits.
  • Used in automotive load switching.
  • Suitable for motor control applications.
  • Power management in battery-powered devices.

IPD30N06S2L-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

55V minimum.

What package is the IPD30N06S2L-13 available in?

TO-252-3 (DPak) surface mount package.

What is the operating temperature range?

-55°C to +175°C.

Is the IPD30N06S2L-13 RoHS compliant?

Yes, it is RoHS3 compliant with a green lead-free package.

What is the typical input capacitance?

1800 pF at Vds=25V, Vgs=0V, f=1MHz.

What is the total gate charge?

54 nC typical, 69 nC max at Vgs=10V.

What is the avalanche energy rating?

240 mJ single pulse.

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