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IPD30N06S2-15 N-Channel MOSFET rated for 55V drain-source voltage and 30A continuous drain current. Packaged in a surface-mount TO-252-3 (DPak) with ultra-low on-resistance of 14.7 mΩ maximum.
Mfr Part #:

IPD30N06S2-15

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET rated for 55V drain-source voltage and 30A continuous drain current. Packaged in a surface-mount TO-252-3 (DPak) with ultra-low on-resistance of 14.7 mΩ maximum.
✓ Total Stock: 2,500 pcs

IPD30N06S2-15 Available from 1 distributor

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✓ Non-Authorised
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2,500 pcs
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2500 pcs On Request 1 On Request On Request On Request On Request On Request
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IPD30N06S2-15 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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IPD30N06S2-15 Description

Short technical summary and product information.

The IPD30N06S2-15 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS series. It is designed for automotive and industrial applications requiring high efficiency and reliability. The device features a maximum drain-source voltage of 55V and a continuous drain current of 30A at 25°C case temperature, with a pulsed drain current capability of 120A.

 

Key electrical characteristics include a typical on-resistance of 11.3 mΩ (maximum 14.7 mΩ) at VGS=10V and ID=30A, gate threshold voltage range of 2.1V to 4.0V, and total gate charge of 110 nC maximum. The device is avalanche tested with a single-pulse avalanche energy rating of 240 mJ.

 

Thermal management is supported by a junction-to-case thermal resistance of 1.1 K/W. The operating junction temperature range is -55°C to 175°C.

 

The MOSFET is offered in a PG-TO252-3-11 package (TO-252-3, DPak) for surface mount assembly. It is AEC Q101 qualified and RoHS compliant, with an MSL rating of 1. The package is lead-free and halogen-free according to the datasheet.

IPD30N06S2-15 Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Infineon Technologies IPD30N06S2-15 N-Channel MOSFET
Subcategory: Single MOSFETs

IPD30N06S2-15 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

IPD30N06S2-15 Features

  • 55V drain-source voltage and 30A continuous drain current.
  • Ultra-low on-resistance of 14.7 mΩ maximum at 10V gate drive.
  • AEC Q101 qualified for automotive applications.
  • Surface-mount TO-252-3 (DPak) package.
  • 175°C maximum operating junction temperature.

IPD30N06S2-15 Applications

  • Suitable for automotive engine control modules.
  • Used in DC-DC converters and power supplies.
  • Ideal for high-current load switching.
  • Applicable in motor control and solenoid drivers.

IPD30N06S2-15 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

55V maximum.

What is the continuous drain current?

30A at 25°C case temperature with VGS=10V.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What is the package type?

TO-252-3 (DPak) surface-mount package (PG-TO252-3-11).

Is this device RoHS compliant?

Yes, RoHS3 compliant per datasheet (unverified).

Is the MOSFET qualified for automotive applications?

Yes, it is AEC Q101 qualified.

What is the typical on-resistance?

11.3 mΩ typical, 14.7 mΩ maximum at VGS=10V, ID=30A.

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