IPD30N03S4L-14 The Infineon Technologies IPD30N03S4L-14 is an N-channel OptiMOS®-T2 Power-Transistor. It offers a continuous drain current of 30A and a drain-source breakdown voltage of 30V.
Mfr Part #:

IPD30N03S4L-14

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IPD30N03S4L-14 is an N-channel OptiMOS®-T2 Power-Transistor. It offers a continuous drain current of 30A and a drain-source breakdown voltage of 30V.
✓ Total Stock: 16 pcs
$ Price Range: $1.67

IPD30N03S4L-14 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
16 pcs
16 pcs On Request 1 On Request On Request On Request On Request On Request

IPD30N03S4L-14 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Input Capacitance
Medical Grade
Military Grade
Mounting Type
Power Dissipation
Storage Temperature
Tape & Reel

IPD30N03S4L-14 Description

Short technical summary and product information.

The Infineon Technologies IPD30N03S4L-14 is an N-channel enhancement mode OptiMOS®-T2 Power-Transistor designed for automotive applications. It features a low on-state resistance (RDS(on)) and a high operating temperature capability.

 

Key electrical characteristics include a drain-source breakdown voltage of 30V and a maximum continuous drain current of 30A at 25°C case temperature with a gate-source voltage of 10V. The on-state resistance is as low as 11.2 mΩ typically at 30A. The device also boasts a gate threshold voltage ranging from 1.0V to 2.2V.

 

With a maximum power dissipation of 31W at 25°C, the IPD30N03S4L-14 operates within a temperature range of -55°C to +175°C. It is AEC Q101 qualified and 100% avalanche tested, ensuring reliability for demanding applications.

 

The component is supplied in a PG-TO252-3-11 package, suitable for surface mounting. Its green product compliance indicates it is RoHS compliant.

IPD30N03S4L-14 Quick Information

Product Type: MOSFET
Series: IPD30N03S4L-14
Canonical Name: OptiMOS®-T2 Power-Transistor
Subcategory: Power MOSFET

IPD30N03S4L-14 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD30N03S4L-14 Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD30N03S4L-14 Features

  • N-channel enhancement mode MOSFET.
  • Automotive AEC Q101 qualified.
  • 175°C maximum operating temperature.
  • Ultra low Rds(on).
  • 100% Avalanche tested.

IPD30N03S4L-14 Applications

  • Suitable for automotive motor control circuits.
  • Used in high-current switching applications.
  • Ideal for power supply and inverter designs.
  • Applicable in automotive power management systems.
  • Suitable for low Rds(on) high-efficiency switching.

IPD30N03S4L-14 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the IPD30N03S4L-14?

The maximum continuous drain current is 30A at 25°C case temperature with a VGS of 10V.

What is the drain-source breakdown voltage of the IPD30N03S4L-14?

The drain-source breakdown voltage is 30V.

What is the maximum on-state resistance (RDS(on)) for this MOSFET?

The maximum on-state resistance is 13.6 mΩ at a drain current of 30A and a gate-source voltage of 10V.

What is the operating temperature range for the IPD30N03S4L-14?

The operating and storage temperature range is -55°C to +175°C.

What package type is the IPD30N03S4L-14 supplied in?

The IPD30N03S4L-14 is supplied in the PG-TO252-3-11 package.

Is the IPD30N03S4L-14 RoHS compliant?

Yes, the IPD30N03S4L-14 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1.

Home

Categories