| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 21+17+ | On Request | On Request | |
|
3,668 pcs
|
3668 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The Infineon IPD30N03S4L-09 is an N-channel OptiMOS®-T2 Power MOSFET suitable for automotive applications. It features a drain-source breakdown voltage of 30V and a low on-state resistance, with a maximum of 9.0 mΩ at VGS=10V and ID=30A.
This device is AEC Q101 qualified and operates at temperatures up to 175°C. It has a continuous drain current rating of 30A at 25°C case temperature and 30A at 100°C case temperature. The pulsed drain current can reach up to 120A.
Key electrical characteristics include a gate threshold voltage between 1.0V and 2.2V, and various capacitance values such as input capacitance (Ciss) up to 1520pF and output capacitance (Coss) up to 420pF. Dynamic characteristics like turn-on delay time are typically 3ns, and fall time is typically 5ns.
The IPD30N03S4L-09 comes in a PG-TO252-3-11 package, designed for surface mounting. It is also a green product, compliant with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The typical gate threshold voltage is 1.5V.
The maximum continuous drain current is 30A.
The maximum power dissipation is 42W at 25°C case temperature.
The operating temperature range is -55°C to +175°C.
The package type is PG-TO252-3-11.