| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11 pcs
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11 pcs | On Request | 1 | On Request | On Request | 18+22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD30N03S2L20ATMA1 is an N-channel enhancement mode MOSFET from Infineon Technologies, part of the OptiMOS family. It is designed for automotive applications and is AEC Q101 qualified. The device offers a drain-source voltage of 30V and a continuous drain current of 30A at 25°C case temperature, with a pulsed drain current rating of 120A.
Key electrical characteristics include a maximum drain-source on-state resistance of 20mΩ at Vgs=10V and Id=18A, and 31mΩ at Vgs=4.5V. The gate threshold voltage ranges from 1.2V to 2V, making it suitable for logic-level drive. The device features low gate charge (14nC typical) and fast switching times, with turn-on delay of 5ns and rise time of 15ns.
The MOSFET is housed in a PG-TO252-3-11 package (TO-252, DPAK) and is surface mountable. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 60W at 25°C case temperature. The package is lead-free and halogen-free, and the device is MSL1 rated for unlimited floor life.
This MOSFET is suitable for a variety of power switching applications, including automotive systems, DC-DC converters, and load switching. Its low on-resistance and fast switching characteristics make it efficient for high-frequency operation.
The maximum drain-source voltage is 30V.
The continuous drain current is 30A at Tc=25°C.
The maximum on-state resistance is 20mΩ at Vgs=10V and Id=18A.
The operating junction temperature range is -55°C to 175°C.
The package is PG-TO252-3-11, which is a TO-252-3, DPAK (2 leads + tab), SC-63 surface mount package.
The device is marked as RoHS3 compliant, but this is unverified.
The gate threshold voltage is 1.2V minimum, 1.6V typical, and 2V maximum.