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IPD26N06S2L35ATMA1 MOSFET N-CH 55V 30A TO252-3
Mfr Part #:

IPD26N06S2L35ATMA1

Mfr Name: Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 30A TO252-3
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IPD26N06S2L35ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IPD26N06S2L35ATMA1 Description

Short technical summary and product information.
MOSFET N-CH 55V 30A TO252-3

IPD26N06S2L35ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD26N06S2L35ATMA1 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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IPD26N06S2L35ATMA2
IPD26N06S2L35ATMA2
Infineon Technologies
IPD26N06S2L35ATMA2 is an N-Channel MOSFET from Infineon's OptiMOS series, rated for 55V drain-source voltage and 30A continuous current. It comes in a surface-mount TO-252-3 package.
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