| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,264 pcs
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5264 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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2,995 pcs
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2995 pcs | On Request | 1 | On Request | On Request | 2021+ | On Request | On Request | |
|
1,044 pcs
|
1044 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
133 pcs
|
133 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
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The Infineon IPD25N06S4L-30 is an N-channel OptiMOS®-T2 Power MOSFET designed for high-performance applications. It offers a drain-source breakdown voltage of 60V and a continuous drain current of up to 25A at 25°C case temperature with a 10V gate-source voltage.
Key electrical characteristics include a maximum on-state resistance of 30 mΩ at 25A and 10V VGS, and a gate threshold voltage ranging from 1.2V to 2.2V. The device operates within a temperature range of -55°C to +175°C and has a power dissipation of 29W at 25°C.
Packaged in a PG-TO252-3-11 surface-mount package, this MOSFET is AEC Q101 qualified, making it suitable for demanding automotive control applications. It also features 100% avalanche tested and is RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 60V.
The typical gate threshold voltage is 1.7V.
The maximum continuous drain current at 25°C is 25A.
The maximum on-state resistance is 30 mΩ at 25A.
The operating temperature range is -55°C to +175°C.
It is supplied in the PG-TO252-3-11 package.
Yes, the IPD25N06S4L-30 is AEC Q101 qualified.