| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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22,500 pcs
|
22500 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPD25N06S2-40 is an N-channel enhancement mode power MOSFET designed for demanding automotive applications. It boasts a 55V drain-source breakdown voltage and a maximum continuous drain current of 29A at 25°C case temperature.
Key electrical characteristics include a low on-state resistance of 40mΩ maximum at 10V gate-source voltage and 13A drain current, along with a typical gate threshold voltage of 3V. The device is rated for a maximum continuous drain current of 21A at 100°C case temperature.
This MOSFET is AEC Q101 qualified, indicating its suitability for automotive environments. It operates at temperatures up to 175°C and is supplied in a PG-TO252-3-11 package, suitable for surface mounting.
Additional features include 100% avalanche tested and MSL1 rating up to 260°C peak reflow, ensuring reliability in various operating conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 55V.
The typical gate threshold voltage is 3V.
The maximum continuous drain current is 29A at 25°C case temperature.
The maximum on-state resistance is 40mΩ.
The operating and storage temperature range is -55°C to +175°C.
This MOSFET is in the PG-TO252-3-11 package.
The RoHS status is RoHS3 Compliant.