| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD25CN10NGATMA1 is an N-channel enhancement mode power MOSFET from Infineon Technologies' OptiMOS 2 family. It is designed for high-efficiency power conversion and offers a drain-source voltage of 100 V and a continuous drain current of 35 A at 25°C case temperature (25 A at 100°C). The device features a low maximum on-resistance of 25 mOhm at Vgs=10 V and Id=35 A, and a gate charge of 31 nC, making it suitable for high-frequency switching and synchronous rectification applications.
Key electrical characteristics include a gate threshold voltage range of 2 to 4 V, input capacitance of 1560 to 2070 pF, and fast switching times with typical turn-on delay of 10 ns and rise time of 4 ns. The device is rated for avalanche energy of 65 mJ single pulse and can handle a reverse diode dv/dt of 6 kV/µs. The operating junction temperature range is -55°C to 175°C.
The MOSFET is packaged in a surface mount TO-252-3 (DPak, SC-63) package with supplier device package PG-TO252-3. It is RoHS3 compliant, halogen-free, and lead-free. The part is qualified according to JEDEC standards for target applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.74 | $1.74 |
| 10+ | $1.11 | $1.11 |
| 100+ | $0.74 | $0.74 |
| 500+ | $0.59 | $0.59 |
| 1,000+ | $0.53 | $0.53 |
| 2,500+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 100 V.
The device is offered in a TO-252-3 (DPak, SC-63) surface mount package with supplier device package PG-TO252-3.
The junction temperature range is -55°C to 175°C.
Yes, the device is RoHS3 compliant as per the datasheet which states Pb-free lead plating and RoHS compliance.
The continuous drain current is 35 A at case temperature 25°C and 25 A at 100°C.
The maximum drain-source on-resistance is 25 mOhm at Vgs=10V and Id=35A.
The gate threshold voltage ranges from 2 V to 4 V at Id=39 µA.