BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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21,000 pcs
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21000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
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4,250 pcs
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4250 pcs | On Request | 1 | On Request | On Request | 17+20+22+ | On Request | On Request | |
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2,577 pcs
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2577 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPD180N10N3G is a high-performance N-Channel Power MOSFET. It is designed for applications requiring robust power handling capabilities. This MOSFET features a maximum drain-source voltage of 100V and a typical drain-source on-resistance of 18mΩ. The maximum power dissipation is rated at 71W, making it suitable for demanding power circuits.
Packaged in a DPAK (TO-263) surface-mount case, the IPD180N10N3G is designed for efficient thermal management. It operates within a wide temperature range, from -55°C to 175°C. The component is manufactured by Infineon, a leading provider of semiconductor solutions.
This power transistor is ideal for use in power supply units, motor control, and other power switching applications where reliability and performance are critical. Its specifications ensure efficient power conversion and management in electronic designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The typical drain-source on-resistance is 18mΩ.
The maximum power dissipation is 71W.
The operating temperature range is from -55°C to 175°C.
The IPD180N10N3G is in a DPAK package.