| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD16CNE8N G is a N-Channel Power MOSFET from Infineon's OptiMOS 2 series, designed for high-frequency switching and synchronous rectification. It features a drain-source breakdown voltage of 85V, continuous drain current of 53A at 25°C, and a low on-resistance of 16mOhm maximum. The device is capable of handling up to 100W power dissipation and operates over a junction temperature range of -55°C to 175°C. It comes in a surface-mount TO-252-3 (DPak) package, making it suitable for various power management applications. The device is halogen-free and has lead-free plating, compliant with RoHS standards.
85V.
Surface-mount TO-252-3 (DPak) package.
-55°C to 175°C.
Yes, it is RoHS compliant.
48nC at Vgs=10V.