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IPD15N06S2L64ATMA2 The IPD15N06S2L64ATMA2 is an N-channel enhancement mode power MOSFET from Infineon. It features a 55V drain-source breakdown voltage and 19A continuous drain current, in a surface-mount TO-252-3 package.
Mfr Part #:

IPD15N06S2L64ATMA2

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IPD15N06S2L64ATMA2 is an N-channel enhancement mode power MOSFET from Infineon. It features a 55V drain-source breakdown voltage and 19A continuous drain current, in a surface-mount TO-252-3 package.
✓ Total Stock: 6,020 pcs
$ Price Range: $0.30 - $1.41

IPD15N06S2L64ATMA2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
6,020 pcs
On Request
6020 pcs On Request 1 On Request On Request On Request On Request On Request
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IPD15N06S2L64ATMA2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Operating Temperature Range
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IPD15N06S2L64ATMA2 Description

Short technical summary and product information.

The IPD15N06S2L64ATMA2 is an N-channel enhancement mode power MOSFET from Infineon, part of the OptiMOS family. It is designed for automotive and industrial power management applications and is AEC Q101 qualified. The device offers a drain-source breakdown voltage of 55V and a continuous drain current of 19A at TC=25°C with VGS=10V. Pulsed drain current capability reaches 76A. On-state resistance is typically 47mΩ at VGS=10V and 61mΩ at VGS=4.5V, with maximum values of 64mΩ and 85mΩ respectively. Low gate charge (total Qg typical 13nC) and fast switching speeds (typ turn-on delay 4ns, rise time 14ns) enable efficient high-frequency switching. The device is avalanche rated to 43mJ and has a maximum junction temperature of 175°C. It is packaged in a surface-mount PG-TO252-3-11 (DPak, SC-63) package, which is MSL1 rated up to 260°C peak reflow. The package is lead-free and green compliant.

IPD15N06S2L64ATMA2 Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: IPD15N06S2L64ATMA2 N-Channel MOSFET, 55V, 19A, TO-252-3
Subcategory: Power MOSFET

IPD15N06S2L64ATMA2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited) up to 260°C peak reflow
REACH Status: REACH Unaffected
Lead Free: Green package (lead free)

IPD15N06S2L64ATMA2 Estimated Pricing

Qty Low High
1+ $1.41 $1.41
10+ $0.89 $0.89
100+ $0.52 $0.52
500+ $0.43 $0.43
1,000+ $0.39 $0.39
2,500+ $0.35 $0.35
5,000+ $0.33 $0.33
10,000+ $0.30 $0.30
25,000+ $0.30 $0.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD15N06S2L64ATMA2 Features

  • Automotive AEC Q101 qualified.
  • 55V drain-source breakdown voltage.
  • 19A continuous drain current capability.
  • Ultra low on-state resistance (64 mOhm max).
  • 175°C maximum junction temperature.

IPD15N06S2L64ATMA2 Applications

  • Used in automotive engine control modules.
  • Ideal for DC-DC converters and inverters.
  • Suitable for power management in industrial equipment.
  • Applicable in motor control circuits.

IPD15N06S2L64ATMA2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IPD15N06S2L64ATMA2?

55V.

What is the continuous drain current rating?

19A at TC=25°C and VGS=10V.

What package is this MOSFET available in?

Surface mount TO-252-3 (DPak, SC-63) with supplier package PG-TO252-3-11.

What is the operating temperature range?

-55°C to 175°C.

Is the IPD15N06S2L64ATMA2 RoHS compliant?

Yes, it is marked as RoHS3 compliant (unverified).

What is the typical gate threshold voltage?

1.6V, with a range of 1.2V to 2.0V at Vds=Vgs, Id=14µA.

Is this MOSFET qualified for automotive applications?

Yes, it is AEC Q101 qualified (unverified).

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