Mfr Part #:

IPD15N06S2L-64

Mfr Name: Infineon

The Infineon IPD15N06S2L-64 is an N-channel logic level enhancement mode MOSFET designed for automotive applications. It offers a 55V drain-source breakdown voltage and a low on-state resistance.

✓ Total Stock: 11,096 pcs

$ Price Range: $2.40

IPD15N06S2L-64 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	8,932 pcs On Request	8932 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	2,164 pcs On Request	2164 pcs	On Request	1	On Request	On Request	1105+	On Request	On Request

IPD15N06S2L-64 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Input Capacitance	354 pF
Mounting Type	Surface Mount
Operating Temperature	175°C
Power Dissipation	47 W
Reverse Recovery Time	34 ns
SVHC Present	Not Present

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IPD15N06S2L-64 Description

Short technical summary and product information.

The Infineon IPD15N06S2L-64 is an OptiMOS® Power-Transistor featuring N-channel logic level enhancement mode operation. This device is automotive AEC Q101 qualified, making it suitable for demanding automotive environments. It boasts an ultra-low Rds(on) and is 100% avalanche tested.

Key electrical characteristics include a drain-source breakdown voltage of 55V and a maximum continuous drain current of 19A at 25°C case temperature with a 10V gate-source voltage. The on-state resistance is as low as 64 mΩ at 10V gate-source voltage and 13A drain current. Dynamic characteristics include input capacitance of 354 pF and output capacitance of 103 pF.

The device operates at temperatures up to 175°C and is supplied in a PG-TO252-3-11 package, suitable for surface mounting. It is also described as having a green package, indicating it is lead-free.

This MOSFET is designed for high-performance applications where efficiency and reliability are critical. Its features make it a robust choice for power management solutions in the automotive sector.

IPD15N06S2L-64 Quick Information

Product Type: MOSFET

Canonical Name: Infineon IPD15N06S2L-64 OptiMOS® Power-Transistor

Subcategory: N-channel Logic Level MOSFET

IPD15N06S2L-64 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Green package (lead free)

IPD15N06S2L-64 Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD15N06S2L-64 Features

Automotive AEC Q101 qualified.
N-channel logic level enhancement mode.
Ultra low Rds(on) of 64 mΩ.
175°C operating temperature.
Green package (lead free).

IPD15N06S2L-64 Applications

Suitable for automotive power systems.
Ideal for high-efficiency switching.
Used in power management circuits.
Designed for demanding environments.

IPD15N06S2L-64 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 55V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 1.6V.

What is the maximum continuous drain current?

The maximum continuous drain current is 19A at 25°C case temperature with a 10V gate-source voltage.

What is the typical on-state resistance (Rds(on))?

The typical on-state resistance is 64 mΩ at 10V gate-source voltage and 13A drain current.

What is the operating temperature range?

The operating and storage temperature range is -55°C to 175°C.

What package type is the IPD15N06S2L-64 in?

The device is in a PG-TO252-3-11 package.

Is this MOSFET AEC-Q101 qualified?

Yes, it is automotive AEC Q101 qualified.