| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time | |
| SVHC Present |
The Infineon IPD14N06S2-80 is an N-channel enhancement mode OptiMOS® Power-Transistor. It is automotive AEC Q101 qualified and rated for a maximum operating temperature of 175°C.
Key electrical characteristics include a drain-source breakdown voltage of 55V and a maximum continuous drain current of 17A at 25°C case temperature. The on-state resistance (Rds(on)) is a maximum of 80mΩ at VGS=10V and ID=7A. Dynamic characteristics include input capacitance (Ciss) of 293pF and output capacitance (Coss) of 94pF.
This MOSFET is supplied in a PG-TO252-3-11 package suitable for surface mounting. It is designed for high-performance applications requiring efficient power switching and low on-state resistance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 55V.
The typical gate threshold voltage is 3V.
The maximum continuous drain current is 17A at 25°C case temperature.
The maximum drain-source on-state resistance is 80mΩ.
The package type is PG-TO252-3-11.
Yes, this MOSFET is automotive AEC Q101 qualified.
The maximum operating temperature is 175°C.