IPD135N08N3GATMA1 Infineon IPD135N08N3GATMA1 is an N-Channel MOSFET rated for 80V drain-source voltage and 45A continuous drain current. It features a low on-resistance of 13.5 mOhm typical at 10V gate drive.
Mfr Part #:

IPD135N08N3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IPD135N08N3GATMA1 is an N-Channel MOSFET rated for 80V drain-source voltage and 45A continuous drain current. It features a low on-resistance of 13.5 mOhm typical at 10V gate drive.
✓ Total Stock: 16,020 pcs
$ Price Range: $0.50 - $1.87

IPD135N08N3GATMA1 Available from 1 distributor

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IPD135N08N3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD135N08N3GATMA1 Description

Short technical summary and product information.

The IPD135N08N3GATMA1 is an N-Channel enhancement mode power MOSFET from Infineon's OptiMOS 3 family, designed for high-frequency switching applications. It is rated for a maximum drain-source voltage of 80V and a continuous drain current of 45A at 25°C case temperature, with a pulsed drain current capability of 180A.

 

The device features a low typical on-resistance of 11.4 mOhm at VGS=10V and ID=45A, with a maximum of 13.5 mOhm. Gate threshold voltage ranges from 2V minimum to 3.5V maximum. The MOSFET is 100% avalanche tested with a single-pulse avalanche energy rating of 50 mJ.

 

Packaged in a surface-mount TO-252-3 (DPak) package with supplier package designation PG-TO252-3, the device is suitable for automated assembly. It is RoHS compliant and halogen-free according to IEC61249-2-21.

IPD135N08N3GATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: Infineon IPD135N08N3GATMA1 N-Channel MOSFET
Subcategory: Power MOSFET

IPD135N08N3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPD135N08N3GATMA1 Estimated Pricing

Qty Low High
1+ $1.87 $1.87
10+ $1.12 $1.12
100+ $0.76 $0.76
500+ $0.62 $0.62
1,000+ $0.56 $0.56
2,500+ $0.53 $0.53
5,000+ $0.52 $0.52
10,000+ $0.50 $0.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD135N08N3GATMA1 Features

  • N-Channel MOSFET rated for 80V drain-source voltage.
  • Continuous drain current of 45A at 25°C case temperature.
  • Low on-resistance of 11.4 mOhm typical at 10V gate drive.
  • 100% avalanche tested with 50 mJ single-pulse energy.
  • RoHS compliant and halogen-free package.

IPD135N08N3GATMA1 Applications

  • Ideal for high-frequency DC/DC converter circuits.
  • Suitable for power management in automotive systems.
  • Used in switched-mode power supplies (SMPS).
  • Applicable for motor control and load switching.

IPD135N08N3GATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPD135N08N3GATMA1?

The maximum drain-source voltage (Vdss) is 80V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 45A at Tc=25°C.

What is the typical on-resistance of this MOSFET?

The typical on-resistance is 11.4 mOhm at VGS=10V and ID=45A.

What package does the IPD135N08N3GATMA1 come in?

It comes in a surface-mount TO-252-3 (DPak) package, also known as PG-TO252-3.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IPD135N08N3GATMA1 RoHS compliant?

Yes, it is RoHS compliant and halogen-free according to IEC61249-2-21.

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