| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,320 pcs
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2320 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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IPD135N03LG is an N-Channel power MOSFET from Infineon Technologies, designed for efficient power switching in a compact TO-252 (DPAK) surface-mount package. This device features a drain-source voltage rating of 30V and a continuous drain current of 30A at 25°C, with a maximum on-resistance of 13.5mΩ at a 10V gate drive. The low on-resistance and fast switching characteristics make it suitable for DC/DC converters and switch-mode power supplies.
The MOSFET offers a maximum power dissipation of 31W at 25°C and operates over a junction temperature range of -55°C to 175°C. It has a total gate charge of 10nC at 10V, and input capacitance of 1000pF, contributing to efficient switching performance. The device is avalanche rated with a single-pulse avalanche energy of 20mJ.
The TO-252 (DPAK) package is designed for surface-mount assembly, with a supplier device package of PG-TO252-3-11. The part is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).
30V.
30A.
13.5mΩ.
-55°C to 175°C.
TO-252-3 (DPAK) surface-mount package.
Listed as RoHS3 Compliant, but unverified.