| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,025 pcs
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4025 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD12CN10NG is an N-channel power MOSFET from Infineon Technologies, part of the OPTLMOS family. It is rated for 100 V drain-source voltage, 67 A continuous drain current, and a maximum on-resistance of 12.4 mΩ at 10 V gate drive.
The device has a maximum gate charge of 65 nC at 10 V, gate threshold voltage of 4 V, and input capacitance of 4320 pF at 50 V. It can dissipate up to 125 W and operates over a junction temperature range of -55 °C to 175 °C.
The surface-mount TO-252-3 DPAK package (supplier package PG-TO252-3-313) is suited for power conversion and switching applications. The part is listed as RoHS3 compliant and REACH unaffected, though these compliance classifications are currently unverified.
The maximum drain-to-source voltage (Vdss) is 100 V.
The continuous drain current is rated at 67 A (at Tc).
The part is supplied in a TO-252-3, DPak (2 leads + tab), SC-63 surface-mount package; the supplier device package is PG-TO252-3-313.
The operating junction temperature range is -55 °C to 175 °C.
The part is listed as RoHS3 Compliant, though this is unverified.
The maximum drain-to-source on-resistance (RDS(on)) is 12.4 mΩ at Vgs = 10 V and ID = 67 A.
The maximum gate threshold voltage is 4 V at a drain current of 83 µA.