| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,409 pcs
|
2409 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD110N12N3GATMA1 is an N-Channel enhancement-mode power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power conversion and switching applications, offering a maximum drain-source voltage of 120V and a continuous drain current of 75A at 25°C case temperature.
The device features a low maximum on-state resistance of 11mOhm at a gate-source voltage of 10V and a drain current of 75A, which helps minimize conduction losses. The gate threshold voltage is typically 3V at a drain current of 83µA, and the maximum gate-source voltage is ±20V. The total gate charge is 65nC at Vgs=10V, and the input capacitance is 4310pF at Vds=60V, making it suitable for medium-frequency switching applications.
This MOSFET is housed in a TO-252-3 (DPak) surface-mount package, also known as PG-TO252-3, which is suitable for automated assembly. It can dissipate up to 136W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C, making it suitable for demanding thermal environments.
Typical applications include power supplies, DC-DC converters, motor control, and other power switching circuits where high current handling and low conduction losses are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.70 | $2.70 |
| 10+ | $1.73 | $1.73 |
| 100+ | $1.18 | $1.18 |
| 500+ | $0.92 | $0.92 |
| 1,000+ | $0.90 | $0.90 |
| 2,500+ | $0.90 | $0.90 |
| 10,000+ | $0.80 | $0.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 120V.
The maximum continuous drain current is 75A at a case temperature of 25°C.
The maximum on-state resistance (Rds(on)) is 11mOhm at a drain current of 75A and a gate-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C.
The IPD110N12N3GATMA1 is available in a TO-252-3 (DPak) surface-mount package, also known as PG-TO252-3.
The maximum power dissipation is 136W at a case temperature of 25°C.
The maximum gate threshold voltage is 3V at a drain current of 83µA (typical value).