| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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389 pcs
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389 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The IPD10N03LA G is an N-channel logic level MOSFET from Infineon Technologies' OptiMOS 2 family, designed for high-frequency DC/DC converter applications. This device features a maximum drain-source voltage of 25V and a continuous drain current rating of 30A at both 25°C and 100°C case temperatures, enabling robust performance in power management circuits.
With a typical on-resistance of 8.7mΩ at 10V gate drive and 30A drain current, the IPD10N03LA G minimizes conduction losses. The logic-level gate threshold voltage (typical 1.6V, maximum 2V) allows direct drive from 3.3V or 5V logic sources. Fast switching characteristics include typical turn-on delay of 6.3ns and fall time of 2.8ns, supported by low gate charge (8.2nC typical) and input capacitance (1021pF typical).
The device is housed in a standard TO-252-3 (DPak) surface mount package with Pb-free lead plating and is RoHS compliant. It offers a maximum junction temperature of 175°C and a junction-to-case thermal resistance of 2.9 K/W. Single-pulse avalanche energy capability of 80mJ and reverse diode dv/dt of 6 kV/µs add ruggedness for demanding applications.
The maximum drain-source voltage (Vdss) is 25V.
The continuous drain current is 30A at both Tc=25°C and Tc=100°C.
Maximum on-resistance is 10.4mΩ at Vgs=10V, Id=30A, and 17.4mΩ at Vgs=4.5V, Id=20A.
The gate threshold voltage is 1.2V minimum, 1.6V typical, and 2V maximum at Vds=Vgs, Id=20µA.
The device is available in a TO-252-3 (DPak) surface mount package.
The operating junction temperature range is -55°C to +175°C.
Yes, the device is RoHS3 compliant and has Pb-free lead plating as per the datasheet.