| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,312 pcs
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1312 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPD100N04S4L-02 is a high-performance N-channel power MOSFET from the OptiMOS-T2 family, specifically engineered for demanding automotive applications. This device features a 40V drain-source breakdown voltage and can handle a continuous drain current of 100A at 25°C.
Key electrical characteristics include a low on-state resistance (RDS(on)) as low as 1.6 mΩ at VGS=10V, ID=100A, and a gate threshold voltage typically around 1.7V. The MOSFET is designed for logic-level gate drive with a VGS range of +20V/-16V.
This component is AEC Q101 qualified, ensuring reliability for automotive use. It operates at temperatures ranging from -55°C to +175°C and has a power dissipation of 150W at 25°C. The device is supplied in a PG-TO252-3-313 surface-mount package.
With its robust design and automotive qualification, the IPD100N04S4L-02 is suitable for various power management tasks in vehicle systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 1.7V.
The maximum continuous drain current is 100A.
The typical on-state resistance is 1.6 mΩ.
The operating temperature range is -55°C to +175°C.
It is supplied in a PG-TO252-3-313 package.
Yes, the IPD100N04S4L-02 is AEC Q101 qualified.