IPD100N04S402ATMA1 N-Channel MOSFET from Infineon, rated for 40V drain-source voltage and 100A continuous drain current. Features low on-resistance of 2mOhm and is AEC qualified for automotive applications.
Mfr Part #:

IPD100N04S402ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon, rated for 40V drain-source voltage and 100A continuous drain current. Features low on-resistance of 2mOhm and is AEC qualified for automotive applications.
✓ Total Stock: 3,520 pcs
$ Price Range: $0.70 - $2.63

IPD100N04S402ATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,520 pcs
3520 pcs On Request 1 On Request On Request On Request On Request On Request

IPD100N04S402ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD100N04S402ATMA1 Description

Short technical summary and product information.

The IPD100N04S402ATMA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS-T2 series. It is designed for high-efficiency power conversion and automotive applications. Key electrical specifications include a maximum drain-source voltage of 40V, continuous drain current of 100A at 25°C case temperature, and a low maximum on-resistance of 2 milliohms at 10V gate drive. The gate charge is 118nC maximum and input capacitance is 9430pF maximum, enabling efficient switching performance.

 

The device is rated for a junction operating temperature range of -55°C to 175°C and can dissipate up to 150W. It is avalanche tested with a single pulse energy rating of 440mJ. The MOSFET comes in a PG-TO252-3-313 surface mount package (DPak) and is RoHS3 compliant and MSL1 rated up to 260°C peak reflow. Additionally, it is AEC qualified, making it suitable for automotive environments.

IPD100N04S402ATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS-T2
Canonical Name: Infineon IPD100N04S4-02 N-Channel MOSFET, 40V, 100A, TO-252-3
Subcategory: Single MOSFETs

IPD100N04S402ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: No

IPD100N04S402ATMA1 Estimated Pricing

Qty Low High
1+ $2.63 $2.63
10+ $1.69 $1.69
50+ $1.28 $1.28
100+ $1.15 $1.15
500+ $0.93 $0.93
2,500+ $0.77 $0.77
7,500+ $0.70 $0.70

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD100N04S402ATMA1 Features

  • AEC qualified for automotive applications.
  • Low on-resistance of 2 milliohms.
  • High continuous drain current of 100A.
  • Operating temperature range -55 to 175°C.
  • RoHS compliant and halogen-free.

IPD100N04S402ATMA1 Applications

  • Used in automotive engine control units.
  • Ideal for DC/DC converter circuits.
  • Suitable for high-current power switching.
  • Applicable in motor drive systems.

IPD100N04S402ATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

40V.

What package is this MOSFET available in?

PG-TO252-3-313 (DPak / TO-252-3).

What is the operating temperature range?

-55°C to 175°C (junction).

Is this MOSFET RoHS compliant?

Yes, RoHS3 compliant.

What is the typical on-resistance?

1.7 milliohms at 10V gate drive and 100A drain current.

What is the maximum continuous drain current?

100A at 25°C case temperature with 10V gate drive.

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