| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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253 pcs
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253 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD09N03LA G is an N-channel logic level power MOSFET from Infineon Technologies, part of the OptiMOS 2 family. It is designed for high-frequency DC/DC converter applications and offers a drain-source voltage rating of 25V and a continuous drain current of 50A at 25°C. The device features a low on-resistance of 8.6 mOhm maximum at 10V gate drive, which contributes to high efficiency in switching circuits.
Key electrical characteristics include a gate threshold voltage of 2V maximum, total gate charge of 13 nC at 5V, and input capacitance of 1642 pF at 15V. The MOSFET is capable of operating over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 63W at 25°C case temperature. The logic level gate drive allows direct interfacing with low-voltage control signals.
The device is supplied in a surface mount TO-252-3 (DPak) package, also known as PG-TO252-3-11, which is suitable for automated assembly. It is qualified according to JEDEC standards and has a moisture sensitivity level of 1 (unlimited) according to the datasheet. The part is marked with the code 09N03LA.
The drain-source voltage (Vdss) is 25 V.
The continuous drain current is 50 A at 25°C case temperature and 45 A at 100°C.
The maximum drain-source on-resistance is 8.6 mOhm at Vgs = 10 V and Id = 30 A.
The maximum gate threshold voltage is 2 V at Id = 20 µA.
The operating junction temperature range is -55°C to 175°C.
The datasheet indicates RoHS compliant (Pb-free lead plating), but this status is unverified.
It is available in a surface mount TO-252-3 (DPak) package, also known as PG-TO252-3-11.