| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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11,020 pcs
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11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD096N08N3GATMA1 is an N-channel power MOSFET from Infineon Technologies, part of the OptiMOS 3 family. It is designed for high-frequency switching applications, particularly DC/DC converters, offering an excellent gate charge times RDS(on) figure of merit. The device is rated for a drain-source voltage of 80V and a continuous drain current of 73A at 25°C case temperature, with a maximum on-state resistance of 9.6mOhm at Vgs=10V and Id=46A.
This MOSFET features a total gate charge of 35nC (max) and input capacitance of 2410pF (max), enabling efficient switching performance. It is 100% avalanche tested and qualified according to JEDEC standards for target applications. The device is Pb-free plated, RoHS compliant, and halogen-free according to IEC61249-2-21.
The IPD096N08N3GATMA1 is available in a TO-252-3 (DPak) surface-mount package, also known as PG-TO252-3. It supports a wide operating junction temperature range from -55°C to 175°C and has a maximum power dissipation of 100W at 25°C case temperature. The thermal resistance from junction to case is 1.5 K/W, and from junction to ambient is 75 K/W (minimal footprint) or 50 K/W with a 6 cm² cooling area.
This component is suitable for power management applications such as DC/DC converters, load switches, and other high-frequency switching circuits where efficiency and thermal performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.89 | $1.89 |
| 10+ | $1.21 | $1.21 |
| 100+ | $0.81 | $0.81 |
| 500+ | $0.64 | $0.64 |
| 1,000+ | $0.60 | $0.60 |
| 2,500+ | $0.60 | $0.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 80V (minimum) at Vgs=0V and Id=1mA.
The continuous drain current is 73A at Tc=25°C and 52A at Tc=100°C.
The maximum on-state resistance is 9.6mOhm at Vgs=10V and Id=46A, with a typical value of 7.9mOhm.
The operating junction temperature range is -55°C to 175°C.
Yes, the device is RoHS compliant and Pb-free plated.
It is available in a TO-252-3 (DPak) surface-mount package, also known as PG-TO252-3.
The maximum power dissipation is 100W at Tc=25°C.