| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD088N06N3GATMA1 is an N-Channel enhancement mode power MOSFET from Infineon Technologies, built with advanced MOSFET technology. It is designed for high-efficiency power management applications.
Key electrical characteristics include a maximum drain-source voltage of 60V and a continuous drain current of 50A (at Tc). The typical on-resistance is 8.8mOhm maximum at Vgs=10V and Id=50A, enabling low conduction losses. The gate threshold voltage is 4V maximum at 34µA drain current. Input capacitance is 3900pF at Vds=30V, and total gate charge is 48nC at Vgs=10V, which aids in efficient switching.
Thermal performance is robust with a maximum power dissipation of 71W at case temperature and an operating junction temperature range of -55°C to 175°C. The device supports a maximum gate-source voltage of ±20V.
The MOSFET is housed in a surface mount TO-252 (DPak) package with supplier device package PG-TO252-3-311, suitable for automated assembly. The mounting type is surface mount, and the package is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
| 10+ | $1.40 | $1.40 |
| 100+ | $0.92 | $0.92 |
| 500+ | $0.73 | $0.73 |
| 1,000+ | $0.65 | $0.65 |
| 2,500+ | $0.59 | $0.59 |
| 5,000+ | $0.58 | $0.58 |
| 10,000+ | $0.55 | $0.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60 V.
The maximum continuous drain current is 50 A at case temperature (Tc).
The maximum on-resistance is 8.8 mOhm at Vgs=10V and Id=50A.
It is available in a surface mount TO-252-3 (DPak) package (PG-TO252-3-311).
The operating junction temperature range is -55°C to 175°C.
The RoHS status is RoHS3 Compliant, though this information is unverified.
The maximum total gate charge is 48 nC at Vgs=10V.