| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,500 pcs
|
8500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| SVHC Present |
The Infineon IPD06P004N is a power MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 60V and a low drain-source on-resistance of 90mΩ at a VGS of 10V and ID of 15A. The device can handle a maximum power dissipation of 63W.
This MOSFET operates within a temperature range of -55°C to 175°C. It is housed in a TO-252 package, suitable for surface-mount applications. The IPD06P004N is manufactured by Infineon, a recognized leader in semiconductor solutions.
Key electrical characteristics include its specified on-resistance and voltage ratings, making it suitable for switching and amplification tasks. The TO-252 package facilitates efficient heat dissipation and integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The drain-source on-resistance is 90mOhm.
The maximum power dissipation is 63W.
The operating temperature range is from -55°C to 175°C.
The IPD06P004N MOSFET is supplied in a TO-252 package.