| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD053N08N3GATMA1 is an N-channel power MOSFET from Infineon Technologies, part of the OptiMOS 3 family. It features a drain-source breakdown voltage of 80V and a continuous drain current of 90A at 25°C case temperature. The device offers a low typical on-resistance of 4.4mΩ at 10V gate drive, with a maximum of 5.3mΩ. It is designed for high-frequency switching and synchronous rectification applications.
The MOSFET has a maximum power dissipation of 150W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C. It includes fast switching characteristics with typical turn-on delay of 18ns and rise time of 66ns. The gate charge total is 52nC typical, enabling efficient gate drive.
The device is housed in a surface-mount TO-252-3 (DPak) package with Pb-free lead plating and is RoHS and halogen-free compliant. It is suitable for automotive and industrial applications requiring high efficiency and reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.97 | $2.97 |
| 10+ | $1.88 | $1.88 |
| 100+ | $1.32 | $1.32 |
| 500+ | $1.10 | $1.10 |
| 1,000+ | $1.02 | $1.02 |
| 2,500+ | $0.95 | $0.95 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 80V (minimum).
Surface-mount TO-252-3 (DPak) package.
-55°C to 175°C junction temperature.
Yes, RoHS3 compliant per datasheet.
90A at 25°C case temperature.
4.4mΩ at Vgs=10V, Id=90A.
52nC typical at Vgs=10V.