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IPD053N08N3G The Infineon IPD053N08N3G is an N-channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 90A. It features a low on-resistance of 5.3mOhm at 90A and 10V.
Mfr Part #:

IPD053N08N3G

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD053N08N3G is an N-channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 90A. It features a low on-resistance of 5.3mOhm at 90A and 10V.
✓ Total Stock: 1,842 pcs
$ Price Range: $2.40

IPD053N08N3G Available from 1 distributor

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✓ Non-Authorised
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Xingangxin ✓
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1,842 pcs
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1842 pcs On Request 1 On Request On Request On Request On Request On Request
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IPD053N08N3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
FET Type
Lead Style
Power Dissipation
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IPD053N08N3G Description

Short technical summary and product information.

The Infineon IPD053N08N3G is a power MOSFET designed for various electronic applications. This N-channel device offers a drain-source voltage (Vds) of 80V and can handle a continuous drain current (Id) of up to 90A at 25°C (Tc).

 

Key electrical characteristics include a low drain-source on-resistance (Rds(on)) of 5.3mOhm when measured at 90A and 10V gate-source voltage (Vgs). The gate threshold voltage (Vgs(th)) is typically 3.5V at 90uA.

 

With a maximum power dissipation of 150W at 25°C (Tc), this MOSFET is suitable for applications requiring efficient power handling. It comes in a TO-252 package, indicating a surface-mount form factor.

 

This component is part of Infineon's MOSFET offerings, designed for reliability and performance in power switching and control circuits.

IPD053N08N3G Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Infineon IPD053N08N3G N Channel MOSFET
Subcategory: N Channel

IPD053N08N3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD053N08N3G Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD053N08N3G Features

  • 80V drain-source voltage rating.
  • 90A continuous drain current.
  • Low 5.3mOhm on-resistance.
  • N-channel MOSFET type.
  • TO-252 surface-mount package.

IPD053N08N3G Applications

  • Ideal for power switching circuits.
  • Suitable for DC-DC converters.
  • Used in motor control applications.
  • Effective for load management.

IPD053N08N3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the IPD053N08N3G MOSFET?

The drain-source voltage (Vds) is 80V.

What is the continuous drain current for the IPD053N08N3G?

The continuous drain current (Id) is 90A at 25°C (Tc).

What is the on-resistance of the IPD053N08N3G MOSFET?

The drain-source on-resistance (Rds On) is 5.3mOhm at 90A and 10V.

What is the gate threshold voltage for the IPD053N08N3G?

The gate threshold voltage (Vgs(th)) is 3.5V at 90uA.

What is the package type for the IPD053N08N3G?

The package type is TO-252.

What is the RoHS status of the IPD053N08N3G?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPD053N08N3G?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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