| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies IPD042P03L3GATMA1 is a single P-Channel enhancement mode MOSFET from the OptiMOS P3 series. It is designed for high-efficiency power management applications requiring a logic-level gate drive. The device offers a drain-source breakdown voltage of -30 V and a continuous drain current of 70 A at a case temperature of 25 °C.
Key electrical characteristics include a maximum drain-source on-state resistance of 4.2 mOhm at VGS = -10 V and 6.8 mOhm at VGS = -4.5 V, enabling low conduction losses. The gate threshold voltage is typically -1.5 V, allowing direct drive from low-voltage logic. The device also features low gate charge (typical 131 nC) and fast switching times, with typical turn-on delay of 21 ns and turn-off delay of 89 ns.
The IPD042P03L3GATMA1 is qualified according to JEDEC standards and supports an operating junction temperature range of -55 °C to 175 °C. It is supplied in a PG-TO252-3 (DPak) surface-mount package and is lead-free and halogen-free. Typical applications include load switches and high-side switching in power supply and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.43 | $2.43 |
| 10+ | $1.56 | $1.56 |
| 100+ | $1.06 | $1.06 |
| 500+ | $0.85 | $0.85 |
| 1,000+ | $0.78 | $0.78 |
| 2,500+ | $0.74 | $0.74 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (V(BR)DSS) is -30 V minimum at VGS = 0 V and ID = -250 µA.
The maximum continuous drain current (ID) is 70 A at a case temperature of 25 °C.
The maximum drain-source on-state resistance (RDS(on)) is 4.2 mOhm at VGS = -10 V and ID = -70 A, and 6.8 mOhm at VGS = -4.5 V and ID = -70 A.
The operating junction temperature range is -55 °C to 175 °C.
The device is available in a PG-TO252-3 (DPak) surface-mount package.
The device is listed as RoHS compliant and is lead-free and halogen-free according to the datasheet.
The gate threshold voltage (VGS(th)) is typically -1.5 V and maximum -1.0 V at VDS = VGS and ID = -270 µA.