IPD042P03L3G IPD042P03L3G is a P-Channel MOSFET from Infineon with 30V drain-source voltage, 4.2mΩ max on-resistance, and 150W power dissipation in a TO-252-3 surface mount package.
Mfr Part #:

IPD042P03L3G

Available from 2 distributors
Mfr Name: Infineon
Infineon
IPD042P03L3G is a P-Channel MOSFET from Infineon with 30V drain-source voltage, 4.2mΩ max on-resistance, and 150W power dissipation in a TO-252-3 surface mount package.
✓ Total Stock: 2,600 pcs
$ Price Range: $2.40

IPD042P03L3G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
600 pcs
600 pcs On Request 1 On Request On Request 18+ On Request On Request

IPD042P03L3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Lead Style
Mounting Type
Operating Temperature
SVHC Present

IPD042P03L3G Description

Short technical summary and product information.

The IPD042P03L3G is a P-Channel enhancement mode MOSFET from Infineon, designed for high-efficiency power management applications. It features a drain-source voltage rating of 30V and a maximum on-resistance of 4.2mΩ at 10V gate drive, enabling low conduction losses. The device offers a typical input capacitance of 12.4nF and a maximum power dissipation of 150W, making it suitable for moderate power switching tasks.

 

This MOSFET operates over a wide junction temperature range of -55°C to 175°C, ensuring reliable performance in demanding environments. The threshold voltage is typically -1.5V. The device is housed in a TO-252-3 (DPAK) surface mount package, which facilitates automated assembly and efficient thermal management.

 

The IPD042P03L3G is suitable for load switching, power management, and DC-DC converter applications where P-Channel MOSFET characteristics are required.

IPD042P03L3G Quick Information

Product Type: MOSFET
Series: IPD
Canonical Name: IPD042P03L3G P-Channel MOSFET
Subcategory: Single MOSFET

IPD042P03L3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD042P03L3G Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD042P03L3G Features

  • 30V drain-source voltage rating.
  • 4.2mΩ max on-resistance at 10V.
  • 150W maximum power dissipation.
  • Wide -55°C to 175°C operating range.
  • Surface mount TO-252-3 package.

IPD042P03L3G Applications

  • Used in power management circuits.
  • Suitable for load switching applications.
  • Ideal for DC-DC converter designs.
  • For low-voltage power distribution.

IPD042P03L3G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPD042P03L3G?

The drain-source voltage rating is 30V.

What is the maximum on-resistance of the IPD042P03L3G?

The maximum on-resistance is 4.2mΩ at 10V gate drive.

What is the operating temperature range of the IPD042P03L3G?

The operating temperature range is -55°C to 175°C.

What package does the IPD042P03L3G come in?

The IPD042P03L3G is available in a TO-252-3 surface mount package.

What is the maximum power dissipation of the IPD042P03L3G?

The maximum power dissipation is 150W.

What is the typical threshold voltage of the IPD042P03L3G?

The typical threshold voltage is -1.5V.

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