| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The IPD042P03L3G is a P-Channel enhancement mode MOSFET from Infineon, designed for high-efficiency power management applications. It features a drain-source voltage rating of 30V and a maximum on-resistance of 4.2mΩ at 10V gate drive, enabling low conduction losses. The device offers a typical input capacitance of 12.4nF and a maximum power dissipation of 150W, making it suitable for moderate power switching tasks.
This MOSFET operates over a wide junction temperature range of -55°C to 175°C, ensuring reliable performance in demanding environments. The threshold voltage is typically -1.5V. The device is housed in a TO-252-3 (DPAK) surface mount package, which facilitates automated assembly and efficient thermal management.
The IPD042P03L3G is suitable for load switching, power management, and DC-DC converter applications where P-Channel MOSFET characteristics are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V.
The maximum on-resistance is 4.2mΩ at 10V gate drive.
The operating temperature range is -55°C to 175°C.
The IPD042P03L3G is available in a TO-252-3 surface mount package.
The maximum power dissipation is 150W.
The typical threshold voltage is -1.5V.