| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,213 pcs
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1213 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The Infineon IPD040N03LG is an N-Channel Power MOSFET built on the OptiMOS 3 technology platform, designed for high-efficiency power conversion. It targets applications such as switch-mode power supplies (SMPS) and DC/DC converters. The device features logic-level gate drive capability, enabling control from 4.5V sources.
Key electrical characteristics include a maximum drain-source voltage of 30V and a continuous drain current of 90A at 25°C case temperature. The typical RDS(on) is as low as 3.3 mOhm at 10V gate drive, with a maximum of 4 mOhm. At 4.5V drive, typical RDS(on) is 4.7 mOhm. Gate threshold voltage ranges from 1V to 2.2V. The device offers fast switching with typical turn-on delay of 7.4 ns and rise time of 6.8 ns.
The MOSFET is rated for a junction temperature range of -55°C to 175°C and a maximum power dissipation of 79W at 25°C case temperature. It is avalanche rated with a single-pulse avalanche current of 90A and avalanche energy of 60 mJ. Thermal resistance from junction to case is 1.9 K/W.
Packaged in a PG-TO252-3-11 (DPak) surface-mount package, the device is RoHS compliant and lead-free. It is qualified according to JEDEC standards. The product is available under part number IPD040N03LG from Infineon Technologies.
The maximum drain-source voltage (Vdss) is 30 V.
It is available in a PG-TO252-3-11 surface-mount package (DPak).
The operating junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant and Pb-free as verified by the datasheet.
The typical RDS(on) is 3.3 mOhm at 10V gate drive (max 4 mOhm) and 4.7 mOhm at 4.5V drive (max 5.9 mOhm).
Total gate charge at 10V gate drive is 38 nC typical, with gate-source charge 8.8 nC and gate-drain charge 4.2 nC.
The avalanche current is 90 A (single pulse) and avalanche energy is 60 mJ at Id=50A.