IPD038N06N3GATMA1 N-channel MOSFET from Infineon Technologies rated for 60V drain-source voltage and 90A continuous drain current. Features 3.8mΩ low on-resistance and TO-252-3 surface-mount package.
Mfr Part #:

IPD038N06N3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-channel MOSFET from Infineon Technologies rated for 60V drain-source voltage and 90A continuous drain current. Features 3.8mΩ low on-resistance and TO-252-3 surface-mount package.
✓ Total Stock: 6,020 pcs
$ Price Range: $0.65 - $2.51

IPD038N06N3GATMA1 Available from 1 distributor

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✓ Non-Authorised
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IPD038N06N3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD038N06N3GATMA1 Description

Short technical summary and product information.

The IPD038N06N3GATMA1 is an N-channel power MOSFET manufactured by Infineon Technologies. It is designed for power switching applications requiring a 60V drain-to-source voltage rating and 90A continuous drain current rating.

 

The device features a maximum drain-source on-resistance of 3.8mΩ at Id = 90A and Vgs = 10V. The gate threshold voltage is 4V at Id = 90µA, and the maximum gate charge is 98nC at Vgs = 10V. Input capacitance is 8000pF at Vds = 30V. Maximum power dissipation is 188W at case temperature.

 

This MOSFET is provided in a TO-252-3 (DPak) surface-mount package, also known as SC-63, with a supplier device package designation of PG-TO252-3. It is rated for an operating junction temperature range of -55°C to 175°C.

 

With its low on-resistance and high current capability, this component is suitable for high-efficiency power conversion, load switching, and motor control circuits. The N-channel enhancement-mode technology allows simple gate drive at 10V.

IPD038N06N3GATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IPD038N06N3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

IPD038N06N3GATMA1 Estimated Pricing

Qty Low High
1+ $2.51 $2.51
10+ $1.61 $1.61
100+ $1.10 $1.10
500+ $0.88 $0.88
1,000+ $0.81 $0.81
2,500+ $0.73 $0.73
5,000+ $0.68 $0.68
7,500+ $0.66 $0.66
12,500+ $0.65 $0.65

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD038N06N3GATMA1 Features

  • 60V maximum drain-to-source voltage.
  • 90A continuous drain current rating.
  • 3.8mΩ on-resistance with 10V gate drive.
  • Surface-mount TO-252-3 DPak package.
  • N-channel metal-oxide semiconductor FET.

IPD038N06N3GATMA1 Applications

  • Used in high-current power switching circuits.
  • Suitable for DC-DC converter input stages.
  • Applicable to motor drive power stages.
  • Works in industrial load switching applications.

IPD038N06N3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

The maximum drain-to-source voltage is 60 V.

What is the package type?

The device is available in a surface-mount TO-252-3 (DPak, 2 leads + tab, SC-63) package with supplier device package PG-TO252-3.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is this component RoHS compliant?

The listed RoHS status is RoHS3 compliant.

What is the continuous drain current rating?

The continuous drain current is 90 A at case temperature (Tc).

What is the drain-source on-resistance?

The maximum Rds(on) is 3.8 mΩ at Id = 90 A and Vgs = 10 V.

What is the maximum power dissipation?

The maximum power dissipation is 188 W at case temperature (Tc).

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