IPD036N04LGATMA1 The IPD036N04LGATMA1 is an N-Channel MOSFET from Infineon Technologies, rated for 40V drain-source voltage and 90A continuous drain current. It is housed in a PG-TO252-3 surface-mount package.
Mfr Part #:

IPD036N04LGATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IPD036N04LGATMA1 is an N-Channel MOSFET from Infineon Technologies, rated for 40V drain-source voltage and 90A continuous drain current. It is housed in a PG-TO252-3 surface-mount package.
✓ Total Stock: 11,020 pcs
$ Price Range: $0.52 - $1.92

IPD036N04LGATMA1 Available from 1 distributor

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IPD036N04LGATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPD036N04LGATMA1 Description

Short technical summary and product information.

The IPD036N04LGATMA1 is an N-Channel enhancement mode MOSFET from Infineon's OptiMOS 3 family, designed for high-efficiency power conversion. It features a drain-source breakdown voltage of 40V and a continuous drain current of 90A at 25°C. The device offers very low on-resistance, with a typical Rds(on) of 3.0 mOhm at Vgs=10V and 3.9 mOhm at Vgs=4.5V, enabling low conduction losses.

 

This MOSFET is optimized for fast switching applications such as DC/DC converters and SMPS. It provides excellent gate charge x Rds(on) figure of merit (FOM), with a total gate charge of 59 nC typical. The device is 100% avalanche tested and supports logic-level gate drive (4.5V and 10V).

 

The IPD036N04LGATMA1 is supplied in a PG-TO252-3 (DPAK) surface-mount package, suitable for automated assembly. It is RoHS compliant and features Pb-free plating.

IPD036N04LGATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 3
Canonical Name: IPD036N04LGATMA1 N-Channel MOSFET
Subcategory: Single N-Channel

IPD036N04LGATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IPD036N04LGATMA1 Estimated Pricing

Qty Low High
1+ $1.92 $1.92
10+ $1.22 $1.22
50+ $0.92 $0.92
100+ $0.82 $0.82
500+ $0.64 $0.64
2,500+ $0.52 $0.52

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD036N04LGATMA1 Features

  • 40V drain-source breakdown voltage rating.
  • 90A continuous drain current at 25°C.
  • 3.0 mOhm typical on-resistance at 10V.
  • Logic-level gate drive (4.5V and 10V).
  • RoHS compliant and Pb-free plating.

IPD036N04LGATMA1 Applications

  • Used in DC/DC converter circuits.
  • Suitable for switched-mode power supplies.
  • Ideal for high-efficiency power management.
  • Applicable in automotive and industrial systems.

IPD036N04LGATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IPD036N04LGATMA1?

The drain-source breakdown voltage is 40V.

What is the maximum continuous drain current?

The continuous drain current is 90A at Tc=25°C with Vgs=10V.

What is the on-resistance of this MOSFET?

The typical on-resistance is 3.0 mOhm at Vgs=10V, Id=90A, and 3.9 mOhm at Vgs=4.5V, Id=90A.

What package is the IPD036N04LGATMA1 available in?

It is available in a PG-TO252-3 (DPAK) surface-mount package.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (junction).

Is the IPD036N04LGATMA1 RoHS compliant?

Yes, the datasheet states it is RoHS compliant with Pb-free plating.

What is the gate threshold voltage?

The gate threshold voltage ranges from 1.2V (minimum) to 2V (maximum) at Id=45µA.

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