| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD031N06L3GATMA1 is an N-Channel enhancement-mode power MOSFET manufactured by Infineon Technologies using MOSFET (Metal Oxide) technology. It is designed for high-current switching applications, with a drain-to-source voltage rating of 60V and a continuous drain current rating of 100A at case temperature. The device features a maximum drain-source on-state resistance of 3.1mOhm at 100A drain current and 10V gate drive, enabling efficient power conversion with reduced conduction losses.
Electrical characteristics include a maximum gate charge of 79nC at 4.5V gate-source voltage, input capacitance of 13000pF at 30V drain-source voltage, and a maximum gate threshold voltage of 2.2V at 93µA drain current. The gate-source voltage range is ±20V, and the device supports drive voltages of 4.5V and 10V for optimized switching performance. Maximum power dissipation is 167W at case temperature, with an operating junction temperature range of -55°C to 175°C.
The device is housed in a TO-252-3 (DPak) surface-mount package with supplier device package designation PG-TO252-3. This compact package is suitable for automated assembly and space-constrained PCB layouts. The surface-mount design facilitates efficient thermal management when used with appropriate PCB copper area and thermal vias.
This power MOSFET is suitable for a variety of power management and switching applications where high current handling and low on-resistance are critical. The combination of 60V voltage rating, 100A current capability, and low Rds(on) makes it appropriate for power supply, motor control, and load switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.06 | $3.06 |
| 10+ | $1.99 | $1.99 |
| 100+ | $1.37 | $1.37 |
| 500+ | $1.18 | $1.18 |
| 2,500+ | $0.98 | $0.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The maximum continuous drain current is 100A at case temperature (Tc).
The maximum drain-source on-state resistance is 3.1mOhm at 100A drain current and 10V gate-source voltage.
The device is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface-mount package, with supplier device package PG-TO252-3.
The operating junction temperature range is -55°C to 175°C.
The maximum power dissipation is 167W at case temperature (Tc).
The maximum gate threshold voltage is 2.2V at 93µA drain current.