| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,602 pcs
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1602 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Package / Case |
The Infineon IPD025N06N is an N-channel MOSFET belonging to the OptiMOSTM series, optimized for synchronous rectification applications. This device features a maximum drain-source voltage (VDS) of 60V and a low maximum on-resistance (RDS(on)) of 2.5mΩ at a gate-source voltage (VGS) of 10V and a drain current (ID) of 90A.
Key electrical parameters include a continuous drain current of 90A at 25°C and 100°C case temperature, and a pulsed drain current (ID,pulse) of up to 360A. The avalanche energy (EAS) is rated at 210mJ. The gate-source voltage limits are ±20V.
Thermal characteristics include a maximum power dissipation of 167W at 25°C case temperature and 3.0W at 25°C ambient temperature with a thermal resistance of 50K/W. The operating and storage temperature range is from -55°C to 175°C.
The IPD025N06N is supplied in a PG-TO252-3 package, suitable for surface mounting. It is Pb-free and Halogen-free compliant.
The maximum drain-source voltage (VDS) is 60 V.
The package type is PG-TO252-3 (surface-mount).
The operating junction and storage temperature range is -55°C to 175°C.
The maximum on-resistance (RDS(on)) is 2.5 mΩ at VGS=10 V, ID=90 A.
The maximum continuous drain current is 90 A at VGS=10 V, TC=25°C.
The single-pulse avalanche energy (EAS) is 210 mJ at ID=90 A, RGS=25 Ω.