| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPC70N04S5L-4R2 is a high-performance N-channel power MOSFET from the OptiMOS™-5 family, specifically qualified for automotive applications.
This device features a drain-source breakdown voltage of 40V and a low on-state resistance (Rds(on)) as low as 3.4mΩ typical at VGS=10V and ID=35A, with a maximum of 4.2mΩ. It can handle a continuous drain current of up to 70A at 25°C case temperature.
The MOSFET operates with a gate threshold voltage typically around 1.6V. Dynamic characteristics include input capacitance up to 1600pF and output capacitance up to 364pF. Switching performance is highlighted by a typical turn-on delay of 3ns and a fall time of 6ns.
Packaged in PG-TDSON-8-33, this surface-mount MOSFET is designed for demanding automotive environments, offering an operating temperature range of -55°C to +175°C. It is AEC Q101 qualified and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 70A at TC=25°C, VGS=10V.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 1.6V.
The maximum Rds(on) at VGS=10V, ID=35A is 4.2mΩ.
The operating and storage temperature range is -55°C to +175°C.
It is supplied in the PG-TDSON-8-33 package.