| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,480 pcs
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3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPC70N04S5-4R6 is an N-channel OptiMOS™-5 power MOSFET specifically engineered for demanding automotive applications. This enhancement-mode, normal-level transistor boasts a drain-source breakdown voltage of 40V and can handle a continuous drain current of up to 70A at 25°C.
Key electrical characteristics include a low drain-source on-state resistance, with a typical value of 3.9mΩ at VGS=10V and ID=35A. Dynamic performance is also optimized, featuring low gate charge and fast switching times. The device operates reliably across a wide temperature range from -55°C to +175°C.
Packaged in a PG-TDSON-8-33 surface-mount package, the IPC70N04S5-4R6 is AEC Q101 qualified, ensuring high reliability for automotive use. It also meets MSL1 requirements and is RoHS compliant, aligning with environmental standards.
This power MOSFET is suitable for various automotive power management functions, including motor control, power distribution, and battery management systems where high efficiency and robust performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 2.8V.
The maximum continuous drain current at 25°C is 70A.
The typical drain-source on-state resistance is 3.9mΩ.
The operating temperature range is -55°C to +175°C.
It is supplied in the PG-TDSON-8-33 package.
Yes, the IPC70N04S5-4R6 is AEC Q101 qualified.