| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,077 pcs
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1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPC50N04S5L-5R5 is a high-performance N-channel power MOSFET from the OptiMOS™-5 family, specifically engineered for demanding automotive applications. This logic-level enhancement mode device boasts a 40V drain-source breakdown voltage and can handle a continuous drain current of up to 50A at 25°C case temperature.
Key electrical characteristics include a low drain-source on-state resistance, with a typical value of 4.4 mΩ at VGS=10V and ID=25A, and 5.7 mΩ at VGS=4.5V and ID=25A. Dynamic performance is supported by typical values for input capacitance (Ciss) of 930pF, output capacitance (Coss) of 210pF, and reverse transfer capacitance (Crss) of 14pF. Switching characteristics show a typical turn-on delay of 2ns and a fall time of 6ns.
This MOSFET is AEC Q101 qualified and operates reliably across a wide temperature range from -55°C to +175°C. It is supplied in a PG-TDSON-8-33 package suitable for surface mounting. The device is also RoHS compliant and rated MSL1.
With its robust specifications and automotive qualification, the IPC50N04S5L-5R5 is well-suited for various power management tasks in vehicle systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 1.6V.
The maximum continuous drain current is 50A.
The typical drain-source on-state resistance at VGS=10V is 4.4 mΩ.
The operating temperature range is -55°C to +175°C.
The package type is PG-TDSON-8-33.
The Moisture Sensitivity Level is 1.